Microscopic Quantum Transport Processes of Out‐of‐Plane Charge Flow in 2D Semiconductors Analyzed by a Fowler–Nordheim Tunneling Probe

Microscopic Quantum Transport Processes of Out‐of‐Plane Charge Flow in 2D Semiconductors Analyzed by a Fowler–Nordheim Tunneling Probe

Abstract Weak interlayer couplings at 2D van der Waals (vdW) interfaces fundamentally distinguish out‐of‐plane charge flow, the information carrier in vdW‐assembled vertical electronic and optical devices, from the in‐plane band transport processes. Here, the out‐of‐plane charge transport behavior i...

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Bibliographic Details
Main Authors: Dong Hoon Shin, Duk Hyun Lee, Sang‐Jun Choi, Seonyeong Kim, Hakseong Kim, Kenji Watanabe, Takashi Taniguchi, Eleanor E. B. Campbell, Sang Wook Lee, Suyong Jung
Format: Article
Language:English
Published: Wiley-VCH 2023-06-01
Series:Advanced Electronic Materials
Subjects:
2D semiconductors
electron and hole field emission
Fowler‐Nordheim tunneling
Schottky‐barrier height
van der Waals vertical heterostructures
Online Access:https://doi.org/10.1002/aelm.202300051

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