Multi-Step Mechanical and Thermal Homogenization for the Warpage Estimation of Silicon Wafers
In response to the increasing demand for high-performance capacitors, with a simultaneous emphasis on minimizing their physical size, a common practice involves etching deep vias and coating them with functional layers to enhance operational efficiency. However, these deep vias often cause warpages...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-03-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/15/3/408 |
| _version_ | 1827305494395486208 |
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| author | Zhouyi Xiang Min Chen Yonghui Deng Songhua Huang Sanli Liu Ji Li |
| author_facet | Zhouyi Xiang Min Chen Yonghui Deng Songhua Huang Sanli Liu Ji Li |
| author_sort | Zhouyi Xiang |
| collection | DOAJ |
| description | In response to the increasing demand for high-performance capacitors, with a simultaneous emphasis on minimizing their physical size, a common practice involves etching deep vias and coating them with functional layers to enhance operational efficiency. However, these deep vias often cause warpages during the processing stage. This study focuses on the numerical modeling of wafer warpage that occurs during the deposition of three thin layers onto these vias. A multi-step mechanical and thermal homogenization approach is proposed to estimate the warpage of the silicon wafer. The efficiency and accuracy of this numerical homogenization strategy are validated by comparing detailed and homogenized models. The multi-step homogenization method yields more accurate results compared to the conventional direct homogenization method. Theoretical analysis is also conducted to predict the shape of the wafer warpage, and this study further explores the impact of via depth and substrate thickness. |
| first_indexed | 2024-04-24T18:00:10Z |
| format | Article |
| id | doaj.art-29f3e081c76b4b2d84f64eb5ff21d95a |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-04-24T18:00:10Z |
| publishDate | 2024-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-29f3e081c76b4b2d84f64eb5ff21d95a2024-03-27T13:55:20ZengMDPI AGMicromachines2072-666X2024-03-0115340810.3390/mi15030408Multi-Step Mechanical and Thermal Homogenization for the Warpage Estimation of Silicon WafersZhouyi Xiang0Min Chen1Yonghui Deng2Songhua Huang3Sanli Liu4Ji Li5School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou 215123, ChinaSchool of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou 215123, ChinaZINSIGHT Technology (Shanghai) Co., Ltd., Shanghai 201114, ChinaSchool of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou 215123, ChinaSchool of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou 215123, ChinaKey Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, ChinaIn response to the increasing demand for high-performance capacitors, with a simultaneous emphasis on minimizing their physical size, a common practice involves etching deep vias and coating them with functional layers to enhance operational efficiency. However, these deep vias often cause warpages during the processing stage. This study focuses on the numerical modeling of wafer warpage that occurs during the deposition of three thin layers onto these vias. A multi-step mechanical and thermal homogenization approach is proposed to estimate the warpage of the silicon wafer. The efficiency and accuracy of this numerical homogenization strategy are validated by comparing detailed and homogenized models. The multi-step homogenization method yields more accurate results compared to the conventional direct homogenization method. Theoretical analysis is also conducted to predict the shape of the wafer warpage, and this study further explores the impact of via depth and substrate thickness.https://www.mdpi.com/2072-666X/15/3/408wafer warpageintegrated capacitormulti-step mechanical homogenizationmulti-step thermal homogenization |
| spellingShingle | Zhouyi Xiang Min Chen Yonghui Deng Songhua Huang Sanli Liu Ji Li Multi-Step Mechanical and Thermal Homogenization for the Warpage Estimation of Silicon Wafers Micromachines wafer warpage integrated capacitor multi-step mechanical homogenization multi-step thermal homogenization |
| title | Multi-Step Mechanical and Thermal Homogenization for the Warpage Estimation of Silicon Wafers |
| title_full | Multi-Step Mechanical and Thermal Homogenization for the Warpage Estimation of Silicon Wafers |
| title_fullStr | Multi-Step Mechanical and Thermal Homogenization for the Warpage Estimation of Silicon Wafers |
| title_full_unstemmed | Multi-Step Mechanical and Thermal Homogenization for the Warpage Estimation of Silicon Wafers |
| title_short | Multi-Step Mechanical and Thermal Homogenization for the Warpage Estimation of Silicon Wafers |
| title_sort | multi step mechanical and thermal homogenization for the warpage estimation of silicon wafers |
| topic | wafer warpage integrated capacitor multi-step mechanical homogenization multi-step thermal homogenization |
| url | https://www.mdpi.com/2072-666X/15/3/408 |
| work_keys_str_mv | AT zhouyixiang multistepmechanicalandthermalhomogenizationforthewarpageestimationofsiliconwafers AT minchen multistepmechanicalandthermalhomogenizationforthewarpageestimationofsiliconwafers AT yonghuideng multistepmechanicalandthermalhomogenizationforthewarpageestimationofsiliconwafers AT songhuahuang multistepmechanicalandthermalhomogenizationforthewarpageestimationofsiliconwafers AT sanliliu multistepmechanicalandthermalhomogenizationforthewarpageestimationofsiliconwafers AT jili multistepmechanicalandthermalhomogenizationforthewarpageestimationofsiliconwafers |