CVD Encapsulation of Laser-Graphitized Electrodes in Diamond Electro-Optical Devices

Conductive graphitized grooves on the dielectric surface of diamond have been created by KrF excimer laser radiation. The advantages of such a circuit board in high-field applications is rather limited because the crystal surface has a relatively low electrical breakdown threshold. To increase the e...

Full description

Bibliographic Details
Main Authors: Maxim S. Komlenok, Vitali V. Kononenko, Andrey P. Bolshakov, Nikolay D. Kurochitskiy, Dmitrii G. Pasternak, Alexander A. Ushakov, Vitaly I. Konov
Format: Article
Language:English
Published: MDPI AG 2023-12-01
Series:Photonics
Subjects:
Online Access:https://www.mdpi.com/2304-6732/11/1/10
_version_ 1797342707667959808
author Maxim S. Komlenok
Vitali V. Kononenko
Andrey P. Bolshakov
Nikolay D. Kurochitskiy
Dmitrii G. Pasternak
Alexander A. Ushakov
Vitaly I. Konov
author_facet Maxim S. Komlenok
Vitali V. Kononenko
Andrey P. Bolshakov
Nikolay D. Kurochitskiy
Dmitrii G. Pasternak
Alexander A. Ushakov
Vitaly I. Konov
author_sort Maxim S. Komlenok
collection DOAJ
description Conductive graphitized grooves on the dielectric surface of diamond have been created by KrF excimer laser radiation. The advantages of such a circuit board in high-field applications is rather limited because the crystal surface has a relatively low electrical breakdown threshold. To increase the electrical strength, a method of encapsulating surface conductive graphitized structures by chemical vapor deposition of an epitaxial diamond layer has been proposed and realized. The quality of the growth diamond is proved by Raman spectroscopy. A comparative study of the electrical resistivity of graphitized wires and the breakdown fields between them before and after diamond growth was carried out. The proposed technique is crucial for diamond-based high-field electro-optical devices, such as THz photoconductive emitters.
first_indexed 2024-03-08T10:37:11Z
format Article
id doaj.art-2a1cc2b922c847e9a99d8edb9363b820
institution Directory Open Access Journal
issn 2304-6732
language English
last_indexed 2024-03-08T10:37:11Z
publishDate 2023-12-01
publisher MDPI AG
record_format Article
series Photonics
spelling doaj.art-2a1cc2b922c847e9a99d8edb9363b8202024-01-26T18:09:17ZengMDPI AGPhotonics2304-67322023-12-011111010.3390/photonics11010010CVD Encapsulation of Laser-Graphitized Electrodes in Diamond Electro-Optical DevicesMaxim S. Komlenok0Vitali V. Kononenko1Andrey P. Bolshakov2Nikolay D. Kurochitskiy3Dmitrii G. Pasternak4Alexander A. Ushakov5Vitaly I. Konov6Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilova Street 38, Moscow 119991, RussiaProkhorov General Physics Institute of the Russian Academy of Sciences, Vavilova Street 38, Moscow 119991, RussiaProkhorov General Physics Institute of the Russian Academy of Sciences, Vavilova Street 38, Moscow 119991, RussiaProkhorov General Physics Institute of the Russian Academy of Sciences, Vavilova Street 38, Moscow 119991, RussiaProkhorov General Physics Institute of the Russian Academy of Sciences, Vavilova Street 38, Moscow 119991, RussiaProkhorov General Physics Institute of the Russian Academy of Sciences, Vavilova Street 38, Moscow 119991, RussiaProkhorov General Physics Institute of the Russian Academy of Sciences, Vavilova Street 38, Moscow 119991, RussiaConductive graphitized grooves on the dielectric surface of diamond have been created by KrF excimer laser radiation. The advantages of such a circuit board in high-field applications is rather limited because the crystal surface has a relatively low electrical breakdown threshold. To increase the electrical strength, a method of encapsulating surface conductive graphitized structures by chemical vapor deposition of an epitaxial diamond layer has been proposed and realized. The quality of the growth diamond is proved by Raman spectroscopy. A comparative study of the electrical resistivity of graphitized wires and the breakdown fields between them before and after diamond growth was carried out. The proposed technique is crucial for diamond-based high-field electro-optical devices, such as THz photoconductive emitters.https://www.mdpi.com/2304-6732/11/1/10diamondCVD growthlaser-induced graphitizationconductivityelectrical breakdown
spellingShingle Maxim S. Komlenok
Vitali V. Kononenko
Andrey P. Bolshakov
Nikolay D. Kurochitskiy
Dmitrii G. Pasternak
Alexander A. Ushakov
Vitaly I. Konov
CVD Encapsulation of Laser-Graphitized Electrodes in Diamond Electro-Optical Devices
Photonics
diamond
CVD growth
laser-induced graphitization
conductivity
electrical breakdown
title CVD Encapsulation of Laser-Graphitized Electrodes in Diamond Electro-Optical Devices
title_full CVD Encapsulation of Laser-Graphitized Electrodes in Diamond Electro-Optical Devices
title_fullStr CVD Encapsulation of Laser-Graphitized Electrodes in Diamond Electro-Optical Devices
title_full_unstemmed CVD Encapsulation of Laser-Graphitized Electrodes in Diamond Electro-Optical Devices
title_short CVD Encapsulation of Laser-Graphitized Electrodes in Diamond Electro-Optical Devices
title_sort cvd encapsulation of laser graphitized electrodes in diamond electro optical devices
topic diamond
CVD growth
laser-induced graphitization
conductivity
electrical breakdown
url https://www.mdpi.com/2304-6732/11/1/10
work_keys_str_mv AT maximskomlenok cvdencapsulationoflasergraphitizedelectrodesindiamondelectroopticaldevices
AT vitalivkononenko cvdencapsulationoflasergraphitizedelectrodesindiamondelectroopticaldevices
AT andreypbolshakov cvdencapsulationoflasergraphitizedelectrodesindiamondelectroopticaldevices
AT nikolaydkurochitskiy cvdencapsulationoflasergraphitizedelectrodesindiamondelectroopticaldevices
AT dmitriigpasternak cvdencapsulationoflasergraphitizedelectrodesindiamondelectroopticaldevices
AT alexanderaushakov cvdencapsulationoflasergraphitizedelectrodesindiamondelectroopticaldevices
AT vitalyikonov cvdencapsulationoflasergraphitizedelectrodesindiamondelectroopticaldevices