Influence of sulfur source on properties of CuSbS2 particles

CuSbS _2 is a direct p-type semiconductor with a two-dimensional layered structure of orthorhombic system, excellent electrical performance, and a band gap of 1.1–1.5 eV, which has a light absorption coefficient of more than 10 ^4 cm ^−1 in the visible light range. CuSbS _2 particles were synthesize...

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Bibliographic Details
Main Authors: Liu Liu, Yijie Zhao, Guowei Zhi, Lihui Cao, Wei Wang, Luanhong Sun, Yuxuan Che
Format: Article
Language:English
Published: IOP Publishing 2022-01-01
Series:Materials Research Express
Subjects:
Online Access:https://doi.org/10.1088/2053-1591/aca06d
Description
Summary:CuSbS _2 is a direct p-type semiconductor with a two-dimensional layered structure of orthorhombic system, excellent electrical performance, and a band gap of 1.1–1.5 eV, which has a light absorption coefficient of more than 10 ^4 cm ^−1 in the visible light range. CuSbS _2 particles were synthesized by microwave irradiation method, and the effects of different sulfur sources on the phase structure, morphology and electrochemical performance of CuSbS _2 particles were studied. The results showed that the sample prepared by thiourea as sulfur source was CuSbS _2 phase, and the morphology was composed of flower-like microspheres and rod-like particles. However, nanorod-like CuSbS _2 particles were obtained using L-cysteine or 3-thiopropionic acid as sulfur sources, and the phase of samples contained CuSbS _2 and Sb _2 S _3 phase. Electrochemical tests showed that L-cysteine based CuSbS _2 particles had the largest photocurrent response, a photocurrent density of 1.03 μ A cm ^−2 and impedance of 14.66 Ω.
ISSN:2053-1591