Inducing room-temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayers
Abstract The lowest energy states in transition metal dichalcogenide (TMD) monolayers follow valley selection rules, which have attracted vast interest due to the possibility of encoding and processing of quantum information. However, these quantum states are strongly affected by temperature-depende...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-03-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-024-00459-8 |
| _version_ | 1797247183857123328 |
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| author | Sergii Morozov Torgom Yezekyan Christian Wolff Sergey I. Bozhevolnyi N. Asger Mortensen |
| author_facet | Sergii Morozov Torgom Yezekyan Christian Wolff Sergey I. Bozhevolnyi N. Asger Mortensen |
| author_sort | Sergii Morozov |
| collection | DOAJ |
| description | Abstract The lowest energy states in transition metal dichalcogenide (TMD) monolayers follow valley selection rules, which have attracted vast interest due to the possibility of encoding and processing of quantum information. However, these quantum states are strongly affected by temperature-dependent intervalley scattering leading to complete valley depolarization, which hampers practical applications at room temperature. Therefore, for achieving clear and robust valley polarization in TMD monolayers one needs to suppress parasitic depolarization processes, which is the central challenge in the growing field of valleytronics. Here, in electron-doping experiments on TMD monolayers, we show that strong doping levels beyond 1013 cm−2 can induce 61% and 37% valley contrast at room temperature in tungsten diselenide and molybdenum diselenide monolayers, respectively. Our findings demonstrate that charged excitons in TMD monolayers hold the potential for the development of efficient valleytronic devices functional at 300 K. |
| first_indexed | 2024-04-24T19:54:39Z |
| format | Article |
| id | doaj.art-2a360480905f41aa82a7530ccaeabb93 |
| institution | Directory Open Access Journal |
| issn | 2397-7132 |
| language | English |
| last_indexed | 2024-04-24T19:54:39Z |
| publishDate | 2024-03-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj.art-2a360480905f41aa82a7530ccaeabb932024-03-24T12:22:32ZengNature Portfolionpj 2D Materials and Applications2397-71322024-03-01811610.1038/s41699-024-00459-8Inducing room-temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayersSergii Morozov0Torgom Yezekyan1Christian Wolff2Sergey I. Bozhevolnyi3N. Asger Mortensen4POLIMA—Center for Polariton-driven Light–Matter Interactions, University of Southern DenmarkPOLIMA—Center for Polariton-driven Light–Matter Interactions, University of Southern DenmarkPOLIMA—Center for Polariton-driven Light–Matter Interactions, University of Southern DenmarkCenter for Nano Optics, University of Southern DenmarkPOLIMA—Center for Polariton-driven Light–Matter Interactions, University of Southern DenmarkAbstract The lowest energy states in transition metal dichalcogenide (TMD) monolayers follow valley selection rules, which have attracted vast interest due to the possibility of encoding and processing of quantum information. However, these quantum states are strongly affected by temperature-dependent intervalley scattering leading to complete valley depolarization, which hampers practical applications at room temperature. Therefore, for achieving clear and robust valley polarization in TMD monolayers one needs to suppress parasitic depolarization processes, which is the central challenge in the growing field of valleytronics. Here, in electron-doping experiments on TMD monolayers, we show that strong doping levels beyond 1013 cm−2 can induce 61% and 37% valley contrast at room temperature in tungsten diselenide and molybdenum diselenide monolayers, respectively. Our findings demonstrate that charged excitons in TMD monolayers hold the potential for the development of efficient valleytronic devices functional at 300 K.https://doi.org/10.1038/s41699-024-00459-8 |
| spellingShingle | Sergii Morozov Torgom Yezekyan Christian Wolff Sergey I. Bozhevolnyi N. Asger Mortensen Inducing room-temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayers npj 2D Materials and Applications |
| title | Inducing room-temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayers |
| title_full | Inducing room-temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayers |
| title_fullStr | Inducing room-temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayers |
| title_full_unstemmed | Inducing room-temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayers |
| title_short | Inducing room-temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayers |
| title_sort | inducing room temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayers |
| url | https://doi.org/10.1038/s41699-024-00459-8 |
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