Electrical Conductivity and Magnetoresistance of Silicon Microstructures in The Vicinity to Metal-Insulator Transition
<p>Complex research of silicon microcrystals with specific resistance from ρ<sub>300K</sub> = 0.025 Ohm × cm to ρ<sub>300K</sub> =0.007 Ohm × cm doped with boron transport impurity to concentrations corresponding to the transition of met...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Vasyl Stefanyk Precarpathian National University
2018-10-01
|
| Series: | Фізика і хімія твердого тіла |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/3261 |
| Summary: | <p>Complex research of silicon microcrystals with specific resistance from ρ<sub>300K</sub> = 0.025 Ohm × cm to ρ<sub>300K</sub> =0.007 Ohm × cm doped with boron transport impurity to concentrations corresponding to the transition of metaldielectricand modified transition metal nickel nickel at low temperatures to the temperature of liquefied helium T= 4.2 K in magnetic fields up to 14 Tl. The features of electrophysical characteristics of samples at lowtemperatures in strong magnetic fields up to 14 Tl are determined due to the influence of a magnetic impurity insemiconductor-diluted magnetism and the use of such crystals in sensors of physical quantities (temperature,magnetic field, deformation) is proposed.</p><p><strong>Key words</strong>: jump conductivity; microcrystal; negative magnetic resistor; spin; cryogenic temperatures</p> |
|---|---|
| ISSN: | 1729-4428 2309-8589 |