Electrical Conductivity and Magnetoresistance of Silicon Microstructures in The Vicinity to Metal-Insulator Transition
<p>Complex research of silicon microcrystals with specific resistance from ρ<sub>300K</sub> = 0.025 Ohm × cm to ρ<sub>300K</sub> =0.007 Ohm × cm doped with boron transport impurity to concentrations corresponding to the transition of met...
Main Authors: | Yuriy Khoverko, Natalia Shcherban |
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Format: | Article |
Language: | English |
Published: |
Vasyl Stefanyk Precarpathian National University
2018-10-01
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Series: | Фізика і хімія твердого тіла |
Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/3261 |
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