New materials based on InP-ZnS system for semiconductor gas analyzers
According to the developed methodology, based on the isothermal diffusion of the initial binary compounds (InP, ZnS), their physical and physicochemical properties, solid solutions of different composition ((InP)x (ZnS)1-x) have been obtained. X-ray examinations have been conducted which allow...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Omsk State Technical University, Federal State Budgetary Educational Institution of Higher Education
2019-04-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/2%20(164)/56-61%20%D0%9A%D0%B8%D1%80%D0%BE%D0%B2%D1%81%D0%BA%D0%B0%D1%8F%20%D0%98.%20%D0%90.,%20%D0%AD%D0%BA%D0%BA%D0%B5%D1%80%D1%82%20%D0%A0.%20%D0%92.,%20%D0%AD%D0%BA%D0%BA%D0%B5%D1%80%D1%82%20%D0%90.%20%D0%9E.%20%D0%B8%20%D0%B4%D1%80..pdf |
| Summary: | According to the developed methodology, based on the
isothermal diffusion of the initial binary compounds (InP,
ZnS), their physical and physicochemical properties, solid
solutions of different composition ((InP)x
(ZnS)1-x) have
been obtained. X-ray examinations have been conducted
which allows to certify them as substitution solid solution
with sphalerite structure and acid-base properties studies
(pH isoelectric state — pHISO). The consistent patterns of
changes in the composition of the studied (bulk and surface)
properties, which are of predominantly smooth nature, have
been established. A correlation between theoretical calculated
crystal density and acid sites strength (pHISO) has been
found which served as the basis for recommending a less
labour-consuming way to search for the advanced materials
for semiconductor gas analyzers. |
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| ISSN: | 1813-8225 2541-7541 |