Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO2 and on Si nanowires
ZnO nanofibre networks (NFNs) were grown by vapour transport method on Si-based substrates. One type of substrate was SiO2 thermally grown on Si and another consisted of a Si wafer onto which Si nanowires (NWs) had been grown having Au nanoparticles catalysts. The ZnO-NFN morphology was observed by...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)
2013-06-01
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| Series: | Materials Research |
| Subjects: | |
| Online Access: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392013000300007 |
| _version_ | 1818546490936655872 |
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| author | Nadia Celeste Vega Monica Tirado David Comedi Andres Rodriguez Tomas Rodriguez Gareth M. Hughes Chris R. M. Grovenor Fernando Audebert |
| author_facet | Nadia Celeste Vega Monica Tirado David Comedi Andres Rodriguez Tomas Rodriguez Gareth M. Hughes Chris R. M. Grovenor Fernando Audebert |
| author_sort | Nadia Celeste Vega |
| collection | DOAJ |
| description | ZnO nanofibre networks (NFNs) were grown by vapour transport method on Si-based substrates. One type of substrate was SiO2 thermally grown on Si and another consisted of a Si wafer onto which Si nanowires (NWs) had been grown having Au nanoparticles catalysts. The ZnO-NFN morphology was observed by scanning electron microscopy on samples grown at 600 °C and 720 °C substrate temperature, while an focused ion beam was used to study the ZnO NFN/Si NWs/Si and ZnO NFN/SiO2 interfaces. Photoluminescence, electrical conductance and photoconductance of ZnO-NFN was studied for the sample grown on SiO2. The photoluminescence spectra show strong peaks due to exciton recombination and lattice defects. The ZnO-NFN presents quasi-persistent photoconductivity effects and ohmic I-V characteristics which become nonlinear and hysteretic as the applied voltage is increased. The electrical conductance as a function of temperature can be described by a modified three dimensional variable hopping model with nanometer-ranged typical hopping distances. |
| first_indexed | 2024-12-12T07:53:56Z |
| format | Article |
| id | doaj.art-2a7eaf9ca734448a8a49c54b4549b09b |
| institution | Directory Open Access Journal |
| issn | 1516-1439 |
| language | English |
| last_indexed | 2024-12-12T07:53:56Z |
| publishDate | 2013-06-01 |
| publisher | Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) |
| record_format | Article |
| series | Materials Research |
| spelling | doaj.art-2a7eaf9ca734448a8a49c54b4549b09b2022-12-22T00:32:22ZengAssociação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)Materials Research1516-14392013-06-01163597602Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO2 and on Si nanowiresNadia Celeste VegaMonica TiradoDavid ComediAndres RodriguezTomas RodriguezGareth M. HughesChris R. M. GrovenorFernando AudebertZnO nanofibre networks (NFNs) were grown by vapour transport method on Si-based substrates. One type of substrate was SiO2 thermally grown on Si and another consisted of a Si wafer onto which Si nanowires (NWs) had been grown having Au nanoparticles catalysts. The ZnO-NFN morphology was observed by scanning electron microscopy on samples grown at 600 °C and 720 °C substrate temperature, while an focused ion beam was used to study the ZnO NFN/Si NWs/Si and ZnO NFN/SiO2 interfaces. Photoluminescence, electrical conductance and photoconductance of ZnO-NFN was studied for the sample grown on SiO2. The photoluminescence spectra show strong peaks due to exciton recombination and lattice defects. The ZnO-NFN presents quasi-persistent photoconductivity effects and ohmic I-V characteristics which become nonlinear and hysteretic as the applied voltage is increased. The electrical conductance as a function of temperature can be described by a modified three dimensional variable hopping model with nanometer-ranged typical hopping distances.http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392013000300007nanostructuressemiconductorsZnOphotoluminescencephotoconductivity |
| spellingShingle | Nadia Celeste Vega Monica Tirado David Comedi Andres Rodriguez Tomas Rodriguez Gareth M. Hughes Chris R. M. Grovenor Fernando Audebert Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO2 and on Si nanowires Materials Research nanostructures semiconductors ZnO photoluminescence photoconductivity |
| title | Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO2 and on Si nanowires |
| title_full | Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO2 and on Si nanowires |
| title_fullStr | Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO2 and on Si nanowires |
| title_full_unstemmed | Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO2 and on Si nanowires |
| title_short | Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO2 and on Si nanowires |
| title_sort | electrical photoelectrical and morphological properties of zno nanofiber networks grown on sio2 and on si nanowires |
| topic | nanostructures semiconductors ZnO photoluminescence photoconductivity |
| url | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392013000300007 |
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