Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives

Multilayer III–V-based solar cells are complex devices consisting of many layers and interfaces. The study and the comprehension of the mechanisms that take place at the interfaces is crucial for efficiency improvement. In this work, we apply frequency-modulated Kelvin probe force microscopy under a...

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Main Authors: Mattia da Lisca, José Alvarez, James P. Connolly, Nicolas Vaissiere, Karim Mekhazni, Jean Decobert, Jean-Paul Kleider
Format: Article
Language:English
Published: Beilstein-Institut 2023-06-01
Series:Beilstein Journal of Nanotechnology
Subjects:
Online Access:https://doi.org/10.3762/bjnano.14.59
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author Mattia da Lisca
José Alvarez
James P. Connolly
Nicolas Vaissiere
Karim Mekhazni
Jean Decobert
Jean-Paul Kleider
author_facet Mattia da Lisca
José Alvarez
James P. Connolly
Nicolas Vaissiere
Karim Mekhazni
Jean Decobert
Jean-Paul Kleider
author_sort Mattia da Lisca
collection DOAJ
description Multilayer III–V-based solar cells are complex devices consisting of many layers and interfaces. The study and the comprehension of the mechanisms that take place at the interfaces is crucial for efficiency improvement. In this work, we apply frequency-modulated Kelvin probe force microscopy under ambient conditions to investigate the capability of this technique for the analysis of an InP/GaInAs(P) multilayer stack. KPFM reveals a strong dependence on the local doping concentration, allowing for the detection of the surface potential of layers with a resolution as low as 20 nm. The analysis of the surface potential allowed for the identification of space charge regions and, thus, the presence of several junctions along the stack. Furthermore, a contrast enhancement in the surface potential image was observed when KPFM was performed under illumination, which is analysed in terms of the reduction of surface band bending induced by surface defects by photogenerated carrier distributions. The analysis of the KPFM data was assisted by means of theoretical modelling simulating the energy bands profile and KPFM measurements.
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spelling doaj.art-2a858464138e484da6ec109d1f29cb2d2023-08-07T08:43:32ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862023-06-0114172573710.3762/bjnano.14.592190-4286-14-59Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectivesMattia da Lisca0José Alvarez1James P. Connolly2Nicolas Vaissiere3Karim Mekhazni4Jean Decobert5Jean-Paul Kleider6Institut Photovoltaïque d'Ile de France, 30 Route Départementale 128, 91120, Palaiseau, FranceInstitut Photovoltaïque d'Ile de France, 30 Route Départementale 128, 91120, Palaiseau, FranceInstitut Photovoltaïque d'Ile de France, 30 Route Départementale 128, 91120, Palaiseau, FranceIII-V Lab, 1 Avenue Augustin Fresnel, 97167 Palaiseau, France III-V Lab, 1 Avenue Augustin Fresnel, 97167 Palaiseau, France III-V Lab, 1 Avenue Augustin Fresnel, 97167 Palaiseau, France Institut Photovoltaïque d'Ile de France, 30 Route Départementale 128, 91120, Palaiseau, FranceMultilayer III–V-based solar cells are complex devices consisting of many layers and interfaces. The study and the comprehension of the mechanisms that take place at the interfaces is crucial for efficiency improvement. In this work, we apply frequency-modulated Kelvin probe force microscopy under ambient conditions to investigate the capability of this technique for the analysis of an InP/GaInAs(P) multilayer stack. KPFM reveals a strong dependence on the local doping concentration, allowing for the detection of the surface potential of layers with a resolution as low as 20 nm. The analysis of the surface potential allowed for the identification of space charge regions and, thus, the presence of several junctions along the stack. Furthermore, a contrast enhancement in the surface potential image was observed when KPFM was performed under illumination, which is analysed in terms of the reduction of surface band bending induced by surface defects by photogenerated carrier distributions. The analysis of the KPFM data was assisted by means of theoretical modelling simulating the energy bands profile and KPFM measurements.https://doi.org/10.3762/bjnano.14.59fm-kpfmfrequency-modulated kelvin probe force microscopyiii–v multilayer stackkelvin probe modellingkp modellingspvsurface photovoltage
spellingShingle Mattia da Lisca
José Alvarez
James P. Connolly
Nicolas Vaissiere
Karim Mekhazni
Jean Decobert
Jean-Paul Kleider
Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives
Beilstein Journal of Nanotechnology
fm-kpfm
frequency-modulated kelvin probe force microscopy
iii–v multilayer stack
kelvin probe modelling
kp modelling
spv
surface photovoltage
title Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives
title_full Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives
title_fullStr Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives
title_full_unstemmed Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives
title_short Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives
title_sort cross sectional kelvin probe force microscopy on iii v epitaxial multilayer stacks challenges and perspectives
topic fm-kpfm
frequency-modulated kelvin probe force microscopy
iii–v multilayer stack
kelvin probe modelling
kp modelling
spv
surface photovoltage
url https://doi.org/10.3762/bjnano.14.59
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