Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives
Multilayer III–V-based solar cells are complex devices consisting of many layers and interfaces. The study and the comprehension of the mechanisms that take place at the interfaces is crucial for efficiency improvement. In this work, we apply frequency-modulated Kelvin probe force microscopy under a...
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Format: | Article |
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Beilstein-Institut
2023-06-01
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Series: | Beilstein Journal of Nanotechnology |
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Online Access: | https://doi.org/10.3762/bjnano.14.59 |
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author | Mattia da Lisca José Alvarez James P. Connolly Nicolas Vaissiere Karim Mekhazni Jean Decobert Jean-Paul Kleider |
author_facet | Mattia da Lisca José Alvarez James P. Connolly Nicolas Vaissiere Karim Mekhazni Jean Decobert Jean-Paul Kleider |
author_sort | Mattia da Lisca |
collection | DOAJ |
description | Multilayer III–V-based solar cells are complex devices consisting of many layers and interfaces. The study and the comprehension of the mechanisms that take place at the interfaces is crucial for efficiency improvement. In this work, we apply frequency-modulated Kelvin probe force microscopy under ambient conditions to investigate the capability of this technique for the analysis of an InP/GaInAs(P) multilayer stack. KPFM reveals a strong dependence on the local doping concentration, allowing for the detection of the surface potential of layers with a resolution as low as 20 nm. The analysis of the surface potential allowed for the identification of space charge regions and, thus, the presence of several junctions along the stack. Furthermore, a contrast enhancement in the surface potential image was observed when KPFM was performed under illumination, which is analysed in terms of the reduction of surface band bending induced by surface defects by photogenerated carrier distributions. The analysis of the KPFM data was assisted by means of theoretical modelling simulating the energy bands profile and KPFM measurements. |
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institution | Directory Open Access Journal |
issn | 2190-4286 |
language | English |
last_indexed | 2024-03-12T17:02:39Z |
publishDate | 2023-06-01 |
publisher | Beilstein-Institut |
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series | Beilstein Journal of Nanotechnology |
spelling | doaj.art-2a858464138e484da6ec109d1f29cb2d2023-08-07T08:43:32ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862023-06-0114172573710.3762/bjnano.14.592190-4286-14-59Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectivesMattia da Lisca0José Alvarez1James P. Connolly2Nicolas Vaissiere3Karim Mekhazni4Jean Decobert5Jean-Paul Kleider6Institut Photovoltaïque d'Ile de France, 30 Route Départementale 128, 91120, Palaiseau, FranceInstitut Photovoltaïque d'Ile de France, 30 Route Départementale 128, 91120, Palaiseau, FranceInstitut Photovoltaïque d'Ile de France, 30 Route Départementale 128, 91120, Palaiseau, FranceIII-V Lab, 1 Avenue Augustin Fresnel, 97167 Palaiseau, France III-V Lab, 1 Avenue Augustin Fresnel, 97167 Palaiseau, France III-V Lab, 1 Avenue Augustin Fresnel, 97167 Palaiseau, France Institut Photovoltaïque d'Ile de France, 30 Route Départementale 128, 91120, Palaiseau, FranceMultilayer III–V-based solar cells are complex devices consisting of many layers and interfaces. The study and the comprehension of the mechanisms that take place at the interfaces is crucial for efficiency improvement. In this work, we apply frequency-modulated Kelvin probe force microscopy under ambient conditions to investigate the capability of this technique for the analysis of an InP/GaInAs(P) multilayer stack. KPFM reveals a strong dependence on the local doping concentration, allowing for the detection of the surface potential of layers with a resolution as low as 20 nm. The analysis of the surface potential allowed for the identification of space charge regions and, thus, the presence of several junctions along the stack. Furthermore, a contrast enhancement in the surface potential image was observed when KPFM was performed under illumination, which is analysed in terms of the reduction of surface band bending induced by surface defects by photogenerated carrier distributions. The analysis of the KPFM data was assisted by means of theoretical modelling simulating the energy bands profile and KPFM measurements.https://doi.org/10.3762/bjnano.14.59fm-kpfmfrequency-modulated kelvin probe force microscopyiii–v multilayer stackkelvin probe modellingkp modellingspvsurface photovoltage |
spellingShingle | Mattia da Lisca José Alvarez James P. Connolly Nicolas Vaissiere Karim Mekhazni Jean Decobert Jean-Paul Kleider Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives Beilstein Journal of Nanotechnology fm-kpfm frequency-modulated kelvin probe force microscopy iii–v multilayer stack kelvin probe modelling kp modelling spv surface photovoltage |
title | Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives |
title_full | Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives |
title_fullStr | Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives |
title_full_unstemmed | Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives |
title_short | Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives |
title_sort | cross sectional kelvin probe force microscopy on iii v epitaxial multilayer stacks challenges and perspectives |
topic | fm-kpfm frequency-modulated kelvin probe force microscopy iii–v multilayer stack kelvin probe modelling kp modelling spv surface photovoltage |
url | https://doi.org/10.3762/bjnano.14.59 |
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