Computational Efficiency Analysis of SiC <sc>MOSFET</sc> Models in SPICE: Static Behavior
Transient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor modeling ignores the requirements of application designers and instead emphasizes detail, physical accuracy, and complexi...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Open Journal of Power Electronics |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9250456/ |
| _version_ | 1819086079459852288 |
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| author | Blake W. Nelson Andrew N. Lemmon Brian T. DeBoi Md Maksudul Hossain H. Alan Mantooth Christopher D. New Jared C. Helton |
| author_facet | Blake W. Nelson Andrew N. Lemmon Brian T. DeBoi Md Maksudul Hossain H. Alan Mantooth Christopher D. New Jared C. Helton |
| author_sort | Blake W. Nelson |
| collection | DOAJ |
| description | Transient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor modeling ignores the requirements of application designers and instead emphasizes detail, physical accuracy, and complexity. While these advancements greatly improve model accuracy, they also serve to increase computational complexity, making the resulting models less attractive to application designers. While some authors depart from this trend and present models which emphasize simulation speed, their results and analysis are limited to qualitative observation. This research develops a methodology to quantify the computational cost of model features and competitively benchmark models against each other. Additionally, it reviews recently published SiC mosfet models and presents a trade study on several candidate models likely to fare well in complex application simulations. Finally, this study also identifies key considerations which should be carried forward into future model design. |
| first_indexed | 2024-12-21T21:14:33Z |
| format | Article |
| id | doaj.art-2ac63d65e626426c965920f659654420 |
| institution | Directory Open Access Journal |
| issn | 2644-1314 |
| language | English |
| last_indexed | 2024-12-21T21:14:33Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Open Journal of Power Electronics |
| spelling | doaj.art-2ac63d65e626426c965920f6596544202022-12-21T18:50:02ZengIEEEIEEE Open Journal of Power Electronics2644-13142020-01-01149951210.1109/OJPEL.2020.30360349250456Computational Efficiency Analysis of SiC <sc>MOSFET</sc> Models in SPICE: Static BehaviorBlake W. Nelson0https://orcid.org/0000-0003-3167-2398Andrew N. Lemmon1https://orcid.org/0000-0002-3934-3735Brian T. DeBoi2https://orcid.org/0000-0002-3774-990XMd Maksudul Hossain3H. Alan Mantooth4https://orcid.org/0000-0001-6447-5345Christopher D. New5Jared C. Helton6Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, AL, USADepartment of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, AL, USADepartment of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, AL, USAElectrical Engineering, University of Arkansas, Fayetteville, AR, USAElectrical Engineering, University of Arkansas, Fayetteville, AR, USADepartment of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, AL, USADepartment of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, AL, USATransient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor modeling ignores the requirements of application designers and instead emphasizes detail, physical accuracy, and complexity. While these advancements greatly improve model accuracy, they also serve to increase computational complexity, making the resulting models less attractive to application designers. While some authors depart from this trend and present models which emphasize simulation speed, their results and analysis are limited to qualitative observation. This research develops a methodology to quantify the computational cost of model features and competitively benchmark models against each other. Additionally, it reviews recently published SiC mosfet models and presents a trade study on several candidate models likely to fare well in complex application simulations. Finally, this study also identifies key considerations which should be carried forward into future model design.https://ieeexplore.ieee.org/document/9250456/Circuit simulationconvergenceLTspicesemiconductor device modelingSiC <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet</sc>SPICE |
| spellingShingle | Blake W. Nelson Andrew N. Lemmon Brian T. DeBoi Md Maksudul Hossain H. Alan Mantooth Christopher D. New Jared C. Helton Computational Efficiency Analysis of SiC <sc>MOSFET</sc> Models in SPICE: Static Behavior IEEE Open Journal of Power Electronics Circuit simulation convergence LTspice semiconductor device modeling SiC <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet</sc> SPICE |
| title | Computational Efficiency Analysis of SiC <sc>MOSFET</sc> Models in SPICE: Static Behavior |
| title_full | Computational Efficiency Analysis of SiC <sc>MOSFET</sc> Models in SPICE: Static Behavior |
| title_fullStr | Computational Efficiency Analysis of SiC <sc>MOSFET</sc> Models in SPICE: Static Behavior |
| title_full_unstemmed | Computational Efficiency Analysis of SiC <sc>MOSFET</sc> Models in SPICE: Static Behavior |
| title_short | Computational Efficiency Analysis of SiC <sc>MOSFET</sc> Models in SPICE: Static Behavior |
| title_sort | computational efficiency analysis of sic sc mosfet sc models in spice static behavior |
| topic | Circuit simulation convergence LTspice semiconductor device modeling SiC <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet</sc> SPICE |
| url | https://ieeexplore.ieee.org/document/9250456/ |
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