Giant and light modifiable third-order optical nonlinearity in a free-standing h-BN film
Recently, hexagonal boron nitride (h-BN) has become a promising nanophotonic platform for on-chip information devices due to the practicability in generating optically stable, ultra-bright quantum emitters. For an integrated information-processing chip, high optical nonlinearity is indispensable for...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Editorial Office of Opto-Electronic Journals, Institute of Optics and Electronics, CAS, China
2022-06-01
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| Series: | Opto-Electronic Science |
| Subjects: | |
| Online Access: | https://www.oejournal.org/article/doi/10.29026/oes.2022.210013 |
| _version_ | 1797374895545384960 |
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| author | Jun Ren Han Lin Xiaorui Zheng Weiwei Lei Dan Liu Tianling Ren Pu Wang Baohua Jia |
| author_facet | Jun Ren Han Lin Xiaorui Zheng Weiwei Lei Dan Liu Tianling Ren Pu Wang Baohua Jia |
| author_sort | Jun Ren |
| collection | DOAJ |
| description | Recently, hexagonal boron nitride (h-BN) has become a promising nanophotonic platform for on-chip information devices due to the practicability in generating optically stable, ultra-bright quantum emitters. For an integrated information-processing chip, high optical nonlinearity is indispensable for various fundamental functionalities, such as all-optical modulation, high order harmonic generation, optical switching and so on. Here we study the third-order optical nonlinearity of free-standing h-BN thin films, which is an ideal platform for on-chip integration and device formation without the need of transfer. The films were synthesized by a solution-based method with abundant functional groups enabling high third-order optical nonlinearity. Unlike the highly inert pristine h-BN films synthesized by conventional methods, the free-standing h-BN films could be locally oxidized upon tailored femtosecond laser irradiation, which further enhances the third-order nonlinearity, especially the nonlinear refraction index, by more than 20 times. The combination of the free-standing h-BN films with laser activation and patterning capability establishes a new promising platform for high performance on-chip photonic devices with modifiable optical performance. |
| first_indexed | 2024-03-08T19:13:18Z |
| format | Article |
| id | doaj.art-2ae282674b404fd98c8f76c311407719 |
| institution | Directory Open Access Journal |
| issn | 2097-0382 |
| language | English |
| last_indexed | 2024-03-08T19:13:18Z |
| publishDate | 2022-06-01 |
| publisher | Editorial Office of Opto-Electronic Journals, Institute of Optics and Electronics, CAS, China |
| record_format | Article |
| series | Opto-Electronic Science |
| spelling | doaj.art-2ae282674b404fd98c8f76c3114077192023-12-27T09:11:28ZengEditorial Office of Opto-Electronic Journals, Institute of Optics and Electronics, CAS, ChinaOpto-Electronic Science2097-03822022-06-011611010.29026/oes.2022.210013oes-2021-0013-JiabaohuaGiant and light modifiable third-order optical nonlinearity in a free-standing h-BN filmJun Ren0Han Lin1Xiaorui Zheng2Weiwei Lei3Dan Liu4Tianling Ren5Pu Wang6Baohua Jia7Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P. O. Box 218, Hawthorn, Victoria 3122, AustraliaCentre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P. O. Box 218, Hawthorn, Victoria 3122, AustraliaCentre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P. O. Box 218, Hawthorn, Victoria 3122, AustraliaInstitute for Frontier Materials, Deakin University, Geelong, Victoria 3216, AustraliaInstitute for Frontier Materials, Deakin University, Geelong, Victoria 3216, AustraliaSchool of Integrated circuits, Tsinghua University, Haidian, Beijing 100084, ChinaInstitute of Laser Engineering, Beijing University of Technology, Chaoyang, Beijing 100124, ChinaCentre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P. O. Box 218, Hawthorn, Victoria 3122, AustraliaRecently, hexagonal boron nitride (h-BN) has become a promising nanophotonic platform for on-chip information devices due to the practicability in generating optically stable, ultra-bright quantum emitters. For an integrated information-processing chip, high optical nonlinearity is indispensable for various fundamental functionalities, such as all-optical modulation, high order harmonic generation, optical switching and so on. Here we study the third-order optical nonlinearity of free-standing h-BN thin films, which is an ideal platform for on-chip integration and device formation without the need of transfer. The films were synthesized by a solution-based method with abundant functional groups enabling high third-order optical nonlinearity. Unlike the highly inert pristine h-BN films synthesized by conventional methods, the free-standing h-BN films could be locally oxidized upon tailored femtosecond laser irradiation, which further enhances the third-order nonlinearity, especially the nonlinear refraction index, by more than 20 times. The combination of the free-standing h-BN films with laser activation and patterning capability establishes a new promising platform for high performance on-chip photonic devices with modifiable optical performance.https://www.oejournal.org/article/doi/10.29026/oes.2022.210013hexagonal boron nitridethird-order nonlinearitylaser oxidationoptoelectronic device |
| spellingShingle | Jun Ren Han Lin Xiaorui Zheng Weiwei Lei Dan Liu Tianling Ren Pu Wang Baohua Jia Giant and light modifiable third-order optical nonlinearity in a free-standing h-BN film Opto-Electronic Science hexagonal boron nitride third-order nonlinearity laser oxidation optoelectronic device |
| title | Giant and light modifiable third-order optical nonlinearity in a free-standing h-BN film |
| title_full | Giant and light modifiable third-order optical nonlinearity in a free-standing h-BN film |
| title_fullStr | Giant and light modifiable third-order optical nonlinearity in a free-standing h-BN film |
| title_full_unstemmed | Giant and light modifiable third-order optical nonlinearity in a free-standing h-BN film |
| title_short | Giant and light modifiable third-order optical nonlinearity in a free-standing h-BN film |
| title_sort | giant and light modifiable third order optical nonlinearity in a free standing h bn film |
| topic | hexagonal boron nitride third-order nonlinearity laser oxidation optoelectronic device |
| url | https://www.oejournal.org/article/doi/10.29026/oes.2022.210013 |
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