Monolithic three‐dimensional integration of aligned carbon nanotube transistors for high‐performance integrated circuits

Monolithic three‐dimensional integration of aligned carbon nanotube transistors for high‐performance integrated circuits

Abstract Carbon nanotube field‐effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low‐temperature fabrication process and require a low thermal budget to construct monolithic three‐dimensional (M3D) integrated circuits (ICs), which have been considered a pr...

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Bibliographic Details
Main Authors: Chenwei Fan, Xiaohan Cheng, Lin Xu, Maguang Zhu, Sujuan Ding, Chuanhong Jin, Yunong Xie, Lian‐Mao Peng, Zhiyong Zhang
Format: Article
Language:English
Published: Wiley 2023-07-01
Series:InfoMat
Subjects:
carbon nanotube
field‐effect transistors
monolithic 3D integration
ring oscillator
Online Access:https://doi.org/10.1002/inf2.12420

Internet

https://doi.org/10.1002/inf2.12420

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