Femtosecond laser irradiation-induced infrared absorption on silicon surfaces

The near-infrared (NIR) absorption below band gap energy of crystalline silicon is significantly increased after the silicon is irradiated with femtosecond laser pulses at a simple experimental condition. The absorption increase in the NIR range primarily depends on the femtosecond laser pulse energ...

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Bibliographic Details
Main Authors: Qinghua Zhu, Mengyan Shen
Format: Article
Language:English
Published: Taylor & Francis Group 2015-04-01
Series:International Journal of Smart and Nano Materials
Subjects:
Online Access:http://dx.doi.org/10.1080/19475411.2015.1057268