Silicon Oxide Etching Process of NF<sub>3</sub> and F<sub>3</sub>NO Plasmas with a Residual Gas Analyzer
The use of NF<sub>3</sub> is significantly increasing every year. However, NF<sub>3</sub> is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF<sub>3</sub> is required. F<sub>3</sub>NO is...
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| author | Woo-Jae Kim In-Young Bang Ji-Hwan Kim Yeon-Soo Park Hee-Tae Kwon Gi-Won Shin Min-Ho Kang Youngjun Cho Byung-Hyang Kwon Jung-Hun Kwak Gi-Chung Kwon |
| author_facet | Woo-Jae Kim In-Young Bang Ji-Hwan Kim Yeon-Soo Park Hee-Tae Kwon Gi-Won Shin Min-Ho Kang Youngjun Cho Byung-Hyang Kwon Jung-Hun Kwak Gi-Chung Kwon |
| author_sort | Woo-Jae Kim |
| collection | DOAJ |
| description | The use of NF<sub>3</sub> is significantly increasing every year. However, NF<sub>3</sub> is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF<sub>3</sub> is required. F<sub>3</sub>NO is considered a potential replacement to NF<sub>3</sub>. In this study, the characteristics and cleaning performance of the F<sub>3</sub>NO plasma to replace the greenhouse gas NF<sub>3</sub> were examined. Etching of SiO<sub>2</sub> thin films was performed, the DC offset of the plasma of both gases (i.e., NF<sub>3</sub> and F<sub>3</sub>NO) was analyzed, and a residual gas analysis was performed. Based on the analysis results, the characteristics of the F<sub>3</sub>NO plasma were studied, and the SiO<sub>2</sub> etch rates of the NF<sub>3</sub> and F<sub>3</sub>NO plasmas were compared. The results show that the etch rates of the two gases have a difference of 95% on average, and therefore, the cleaning performance of the F<sub>3</sub>NO plasma was demonstrated, and the potential benefit of replacing NF<sub>3</sub> with F<sub>3</sub>NO was confirmed. |
| first_indexed | 2024-03-10T10:45:38Z |
| format | Article |
| id | doaj.art-2af626a19e554cee878df1d505c52ecd |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T10:45:38Z |
| publishDate | 2021-06-01 |
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| record_format | Article |
| series | Materials |
| spelling | doaj.art-2af626a19e554cee878df1d505c52ecd2023-11-21T22:34:19ZengMDPI AGMaterials1996-19442021-06-011411302610.3390/ma14113026Silicon Oxide Etching Process of NF<sub>3</sub> and F<sub>3</sub>NO Plasmas with a Residual Gas AnalyzerWoo-Jae Kim0In-Young Bang1Ji-Hwan Kim2Yeon-Soo Park3Hee-Tae Kwon4Gi-Won Shin5Min-Ho Kang6Youngjun Cho7Byung-Hyang Kwon8Jung-Hun Kwak9Gi-Chung Kwon10Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, KoreaDepartment of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, KoreaDepartment of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, KoreaDepartment of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, KoreaDepartment of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, KoreaDepartment of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, KoreaDepartment of Nano-Process, National Nanofab Center (NNFC), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, KoreaSK Materials Co., Ltd., 110-5, Myeonghaksandan-ro, Yeondong-myeon, Sejong 30068, KoreaSK Materials Co., Ltd., 110-5, Myeonghaksandan-ro, Yeondong-myeon, Sejong 30068, KoreaSK Materials Co., Ltd., 110-5, Myeonghaksandan-ro, Yeondong-myeon, Sejong 30068, KoreaDepartment of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, KoreaThe use of NF<sub>3</sub> is significantly increasing every year. However, NF<sub>3</sub> is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF<sub>3</sub> is required. F<sub>3</sub>NO is considered a potential replacement to NF<sub>3</sub>. In this study, the characteristics and cleaning performance of the F<sub>3</sub>NO plasma to replace the greenhouse gas NF<sub>3</sub> were examined. Etching of SiO<sub>2</sub> thin films was performed, the DC offset of the plasma of both gases (i.e., NF<sub>3</sub> and F<sub>3</sub>NO) was analyzed, and a residual gas analysis was performed. Based on the analysis results, the characteristics of the F<sub>3</sub>NO plasma were studied, and the SiO<sub>2</sub> etch rates of the NF<sub>3</sub> and F<sub>3</sub>NO plasmas were compared. The results show that the etch rates of the two gases have a difference of 95% on average, and therefore, the cleaning performance of the F<sub>3</sub>NO plasma was demonstrated, and the potential benefit of replacing NF<sub>3</sub> with F<sub>3</sub>NO was confirmed.https://www.mdpi.com/1996-1944/14/11/3026nitrogen oxide trifluoridenitrogen fluoride oxidereactive ion etchsilicon oxide etch |
| spellingShingle | Woo-Jae Kim In-Young Bang Ji-Hwan Kim Yeon-Soo Park Hee-Tae Kwon Gi-Won Shin Min-Ho Kang Youngjun Cho Byung-Hyang Kwon Jung-Hun Kwak Gi-Chung Kwon Silicon Oxide Etching Process of NF<sub>3</sub> and F<sub>3</sub>NO Plasmas with a Residual Gas Analyzer Materials nitrogen oxide trifluoride nitrogen fluoride oxide reactive ion etch silicon oxide etch |
| title | Silicon Oxide Etching Process of NF<sub>3</sub> and F<sub>3</sub>NO Plasmas with a Residual Gas Analyzer |
| title_full | Silicon Oxide Etching Process of NF<sub>3</sub> and F<sub>3</sub>NO Plasmas with a Residual Gas Analyzer |
| title_fullStr | Silicon Oxide Etching Process of NF<sub>3</sub> and F<sub>3</sub>NO Plasmas with a Residual Gas Analyzer |
| title_full_unstemmed | Silicon Oxide Etching Process of NF<sub>3</sub> and F<sub>3</sub>NO Plasmas with a Residual Gas Analyzer |
| title_short | Silicon Oxide Etching Process of NF<sub>3</sub> and F<sub>3</sub>NO Plasmas with a Residual Gas Analyzer |
| title_sort | silicon oxide etching process of nf sub 3 sub and f sub 3 sub no plasmas with a residual gas analyzer |
| topic | nitrogen oxide trifluoride nitrogen fluoride oxide reactive ion etch silicon oxide etch |
| url | https://www.mdpi.com/1996-1944/14/11/3026 |
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