| Summary: | The wider bandgap AlGaN (Eg > 3.4 eV) channel-based high electron mobility transistors (HEMTs) are more effective for high voltage operation. High critical electric field and high saturation velocity are the major advantages of AlGaN channel HEMTs, which push the power electronics to a greater operating regime. In this article, we present the DC characteristics of 0.8 µm gate length (<i>L<sub>G</sub></i>) and 1 µm gate-drain distance (<i>L<sub>GD</sub></i>) AlGaN channel-based high electron mobility transistors (HEMTs) on ultra-wide bandgap β-Ga<sub>2</sub>O<sub>3</sub> Substrate. The β-Ga<sub>2</sub>O<sub>3</sub> substrate is cost-effective, available in large wafer size and has low lattice mismatch (0 to 2.4%) with AlGaN alloys compared to conventional SiC and Si substrates. A physics-based numerical simulation was performed to investigate the DC characteristics of the HEMTs. The proposed HEMT exhibits sheet charge density (<i>n<sub>s</sub></i>) of 1.05 × 10<sup>13</sup> cm<sup>−2</sup>, a peak on-state drain current (<i>I<sub>DS</sub></i>) of 1.35 A/mm, DC transconductance (<i>g<sub>m</sub></i>) of 277 mS/mm. The ultra-wide bandgap AlGaN channel HEMT on β-Ga<sub>2</sub>O<sub>3</sub> substrate with conventional rectangular gate structure showed 244 V off-state breakdown voltage (<i>V<sub>BR</sub></i>) and field plate gate device showed 350 V. The AlGaN channel HEMTs on β-Ga<sub>2</sub>O<sub>3</sub> substrate showed an excellent performance in <i>I<sub>ON</sub></i>/<i>I<sub>OFF</sub></i> and <i>V<sub>BR</sub></i>. The high performance of the proposed HEMTs on β-Ga<sub>2</sub>O<sub>3</sub> substrate is suitable for future portable power converters, automotive, and avionics applications.
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