Investigation of AlGaN Channel HEMTs on β-Ga<sub>2</sub>O<sub>3</sub> Substrate for High-Power Electronics
The wider bandgap AlGaN (Eg > 3.4 eV) channel-based high electron mobility transistors (HEMTs) are more effective for high voltage operation. High critical electric field and high saturation velocity are the major advantages of AlGaN channel HEMTs, which push the power electronics to a greater op...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-01-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/2/225 |