Influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor

Influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor

A phase field method was used to investigate the influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor containing a polycrystalline gate. Both the domain structure and the electrical behavior of the ferroelectric field-effect tra...

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Bibliographic Details
Main Authors:	W. X. Guo, P. F. Tan, X. P. Ouyang, B. Li, H. X. Guo, X. L. Zhong, J. B. Wang, F. Wang
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2018-10-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5046431

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