Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation
The insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit, aerospace, etc. The main characteristic...
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| Format: | Article |
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MDPI AG
2023-05-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/16/9/3504 |
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| author | Jibing Chen Bowen Liu Maohui Hu Shisen Huang Shanji Yu Yiping Wu Junsheng Yang |
| author_facet | Jibing Chen Bowen Liu Maohui Hu Shisen Huang Shanji Yu Yiping Wu Junsheng Yang |
| author_sort | Jibing Chen |
| collection | DOAJ |
| description | The insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit, aerospace, etc. The main characteristics of its operating environment are high voltage, large current, and high power density, which can easily cause issues, such as thermal stress, thermal fatigue, and mechanical stress. Therefore, the reliability of IGBT module packaging has become a critical research topic. This study focuses on the damage of power device solder layers and applies heat transfer theory. Three typical solders for welding IGBTs (92.5Pb5Sn2.5Ag, Sn3.0Ag0.5Cu (SAC305), and nano-silver solder paste) are analyzed using JMatPro software to simulate their characteristics. First, a finite element analysis method is used to simulate the entire IGBT module with ANSYS Workbench platform. The study compares the impact of three types of solders on the overall heat transfer of the IGBT module under normal operation and welding layer damage conditions. The characteristics are analyzed based on changes in the junction temperature, heat flow path, and the law of thermal stress and deformation. The findings indicated that under steady-state working conditions, adjacent chips in a multi-chip IGBT module had significant thermal coupling, with a maximum temperature difference between chip junctions reaching up to 13 °C, and a phenomenon of heat concentration emerged. The three types of solders could change the thermal conductivity and heat transfer direction of the IGBT module to varying degrees, resulting in a temperature change of 3–6 °C. Under conditions of solder layer damage, the junction temperature increased linearly with the severity of the damage. In the 92.5Pb5Sn2.5Ag and Sn3.0Ag0.5Cu (SAC305) solders, the presence of intermetallic compounds (IMCs) led to more stress concentration points in the solder layer, with the maximum stress reaching 7.14661 × 10<sup>7</sup> MPa and concentrated at the edge of the solder layer. The nano-silver solder layer had the best thermal conductivity, and the maximum thermal deformation under the same conditions was only 1.9092 × 10<sup>−5</sup> m. |
| first_indexed | 2024-03-11T04:13:54Z |
| format | Article |
| id | doaj.art-2b2fb5b766374ea38f32e590367177e1 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-11T04:13:54Z |
| publishDate | 2023-05-01 |
| publisher | MDPI AG |
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| series | Materials |
| spelling | doaj.art-2b2fb5b766374ea38f32e590367177e12023-11-17T23:16:59ZengMDPI AGMaterials1996-19442023-05-01169350410.3390/ma16093504Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling SimulationJibing Chen0Bowen Liu1Maohui Hu2Shisen Huang3Shanji Yu4Yiping Wu5Junsheng Yang6School of Mechanical Engineering, Wuhan Polytechnic University, Wuhan 430000, ChinaSchool of Mechanical Engineering, Wuhan Polytechnic University, Wuhan 430000, ChinaSchool of Mechanical Engineering, Wuhan Polytechnic University, Wuhan 430000, ChinaSchool of Mechanical Engineering, Wuhan Polytechnic University, Wuhan 430000, ChinaSchool of Mechanical Engineering, Wuhan Polytechnic University, Wuhan 430000, ChinaSchool of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430070, ChinaSchool of Mechanical Engineering, Wuhan Polytechnic University, Wuhan 430000, ChinaThe insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit, aerospace, etc. The main characteristics of its operating environment are high voltage, large current, and high power density, which can easily cause issues, such as thermal stress, thermal fatigue, and mechanical stress. Therefore, the reliability of IGBT module packaging has become a critical research topic. This study focuses on the damage of power device solder layers and applies heat transfer theory. Three typical solders for welding IGBTs (92.5Pb5Sn2.5Ag, Sn3.0Ag0.5Cu (SAC305), and nano-silver solder paste) are analyzed using JMatPro software to simulate their characteristics. First, a finite element analysis method is used to simulate the entire IGBT module with ANSYS Workbench platform. The study compares the impact of three types of solders on the overall heat transfer of the IGBT module under normal operation and welding layer damage conditions. The characteristics are analyzed based on changes in the junction temperature, heat flow path, and the law of thermal stress and deformation. The findings indicated that under steady-state working conditions, adjacent chips in a multi-chip IGBT module had significant thermal coupling, with a maximum temperature difference between chip junctions reaching up to 13 °C, and a phenomenon of heat concentration emerged. The three types of solders could change the thermal conductivity and heat transfer direction of the IGBT module to varying degrees, resulting in a temperature change of 3–6 °C. Under conditions of solder layer damage, the junction temperature increased linearly with the severity of the damage. In the 92.5Pb5Sn2.5Ag and Sn3.0Ag0.5Cu (SAC305) solders, the presence of intermetallic compounds (IMCs) led to more stress concentration points in the solder layer, with the maximum stress reaching 7.14661 × 10<sup>7</sup> MPa and concentrated at the edge of the solder layer. The nano-silver solder layer had the best thermal conductivity, and the maximum thermal deformation under the same conditions was only 1.9092 × 10<sup>−5</sup> m.https://www.mdpi.com/1996-1944/16/9/3504IGBT solder layerpackaging reliabilityinterconnection technologythermal conductivity characteristicsthermal–mechanical coupling |
| spellingShingle | Jibing Chen Bowen Liu Maohui Hu Shisen Huang Shanji Yu Yiping Wu Junsheng Yang Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation Materials IGBT solder layer packaging reliability interconnection technology thermal conductivity characteristics thermal–mechanical coupling |
| title | Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation |
| title_full | Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation |
| title_fullStr | Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation |
| title_full_unstemmed | Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation |
| title_short | Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation |
| title_sort | study of the solder characteristics of igbt modules based on thermal mechanical coupling simulation |
| topic | IGBT solder layer packaging reliability interconnection technology thermal conductivity characteristics thermal–mechanical coupling |
| url | https://www.mdpi.com/1996-1944/16/9/3504 |
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