Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation
The insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit, aerospace, etc. The main characteristic...
Main Authors: | Jibing Chen, Bowen Liu, Maohui Hu, Shisen Huang, Shanji Yu, Yiping Wu, Junsheng Yang |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2023-05-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/16/9/3504 |
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