Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation

The insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit, aerospace, etc. The main characteristic...

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Bibliographic Details
Main Authors: Jibing Chen, Bowen Liu, Maohui Hu, Shisen Huang, Shanji Yu, Yiping Wu, Junsheng Yang
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/16/9/3504

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