Effects of Asymmetric Local Joule Heating on Silicon Nanowire-Based Devices Formed by Dielectrophoresis Alignment Across Pt Electrodes
Abstract We demonstrate the fabrication and characterization of silicon nanowire-based devices in metal-nanowire-metal configuration using direct current dielectrophoresis. The current-voltage characteristics of the devices were found rectifying, and their direction of rectification could be determi...
Main Authors: | Hsiang-Hsi Ho, Chun-Lung Lin, Wei-Che Tsai, Liang-Zheng Hong, Cheng-Han Lyu, Hsun-Feng Hsu |
---|---|
Format: | Article |
Language: | English |
Published: |
SpringerOpen
2018-01-01
|
Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-017-2423-z |
Similar Items
-
Fabrication of Rectification Nanosensors by Direct Current Dielectrophoresis Alignment of ZnO Nanowires
by: Kai-Heng Sun, et al.
Published: (2021-05-01) -
Hybrid Silicon Nanowire Devices and Their Functional Diversity
by: Larysa Baraban, et al.
Published: (2019-08-01) -
Rapid Growth of Niobium Oxide Nanowires by Joule Resistive Heating
by: Aarón Calvo-Villoslada, et al.
Published: (2024-03-01) -
Plasmon-Enhanced Photoresponse of Self-Powered Si Nanoholes Photodetector by Metal Nanowires
by: Pericle Varasteanu, et al.
Published: (2021-09-01) -
Neuron Stimulation Device Integrated with Silicon Nanowire-Based Photodetection Circuit on a Flexible Substrate
by: Suk Won Jung, et al.
Published: (2016-12-01)