A Violet‐Light‐Responsive ReRAM Based on Zn2SnO4/Ga2O3 Heterojunction as an Artificial Synapse for Visual Sensory and In‐Memory Computing

A Violet‐Light‐Responsive ReRAM Based on Zn2SnO4/Ga2O3 Heterojunction as an Artificial Synapse for Visual Sensory and In‐Memory Computing

Abstract Due to the imitation of the neural functionalities of the human brain via optical modulation of resistance states, photoelectric resistive random access memory (ReRAM) devices attract extensive attraction for synaptic electronics and in‐memory computing applications. In this work, a photoel...

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Những tác giả chính: Saransh Shrivastava, Wei‐Sin Dai, Stephen Ekaputra Limantoro, Hans Juliano, Tseung‐Yuen Tseng
Định dạng: Bài viết
Ngôn ngữ:English
Được phát hành: Wiley-VCH 2025-03-01
Loạt:Advanced Electronic Materials
Những chủ đề:
in‐memory computing
photoelectric ReRAM
synaptic electronics
violet light stimulation
visual sensory
wide bandgap oxide semiconductor
Truy cập trực tuyến:https://doi.org/10.1002/aelm.202400527

Internet

https://doi.org/10.1002/aelm.202400527

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