Epitaxial Integration of Dirac Semimetals with Si(001)
Topological semimetals contain novel combinations of properties that make them useful in a variety of applications, including optoelectronics, spintronics and low energy computing, and catalysis. Although they have been grown with high quality as bulk single crystals, incorporation with semiconducto...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-03-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/13/4/578 |
| _version_ | 1797605841341251584 |
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| author | Anthony Rice Kirstin Alberi |
| author_facet | Anthony Rice Kirstin Alberi |
| author_sort | Anthony Rice |
| collection | DOAJ |
| description | Topological semimetals contain novel combinations of properties that make them useful in a variety of applications, including optoelectronics, spintronics and low energy computing, and catalysis. Although they have been grown with high quality as bulk single crystals, incorporation with semiconductor substrates will ultimately be required to maximize their technological reach. Here, epitaxial growth of the Dirac semimetal Cd<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula>As<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula> on Si(001) is demonstrated through two routes. First, Cd<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula>As<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>(112) epilayers are grown on Si(001) via an intermediate CdTe(111) buffer layer. Second, Cd<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula>As<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>(112) is grown directly on Si(001). This work sets the foundation for integration of novel semimetal materials with existing CMOS technology. |
| first_indexed | 2024-03-11T05:06:47Z |
| format | Article |
| id | doaj.art-2b5f3682797d45599540c038a6e7581b |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-11T05:06:47Z |
| publishDate | 2023-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-2b5f3682797d45599540c038a6e7581b2023-11-17T18:50:33ZengMDPI AGCrystals2073-43522023-03-0113457810.3390/cryst13040578Epitaxial Integration of Dirac Semimetals with Si(001)Anthony Rice0Kirstin Alberi1National Renewable Energy Laboratory, Golden, CO 80401, USANational Renewable Energy Laboratory, Golden, CO 80401, USATopological semimetals contain novel combinations of properties that make them useful in a variety of applications, including optoelectronics, spintronics and low energy computing, and catalysis. Although they have been grown with high quality as bulk single crystals, incorporation with semiconductor substrates will ultimately be required to maximize their technological reach. Here, epitaxial growth of the Dirac semimetal Cd<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula>As<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula> on Si(001) is demonstrated through two routes. First, Cd<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula>As<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>(112) epilayers are grown on Si(001) via an intermediate CdTe(111) buffer layer. Second, Cd<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula>As<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>(112) is grown directly on Si(001). This work sets the foundation for integration of novel semimetal materials with existing CMOS technology.https://www.mdpi.com/2073-4352/13/4/578molecular beam epitaxytopological semimetalsthin filmssilicon |
| spellingShingle | Anthony Rice Kirstin Alberi Epitaxial Integration of Dirac Semimetals with Si(001) Crystals molecular beam epitaxy topological semimetals thin films silicon |
| title | Epitaxial Integration of Dirac Semimetals with Si(001) |
| title_full | Epitaxial Integration of Dirac Semimetals with Si(001) |
| title_fullStr | Epitaxial Integration of Dirac Semimetals with Si(001) |
| title_full_unstemmed | Epitaxial Integration of Dirac Semimetals with Si(001) |
| title_short | Epitaxial Integration of Dirac Semimetals with Si(001) |
| title_sort | epitaxial integration of dirac semimetals with si 001 |
| topic | molecular beam epitaxy topological semimetals thin films silicon |
| url | https://www.mdpi.com/2073-4352/13/4/578 |
| work_keys_str_mv | AT anthonyrice epitaxialintegrationofdiracsemimetalswithsi001 AT kirstinalberi epitaxialintegrationofdiracsemimetalswithsi001 |