Electrical and photoelectric properties of heterostructures NiO/p-CdTe and NiO/n-CdTe
In this study, we investigate the electrical and photoelectric properties of heterostructures formed by the reactive magnetron sputtering of thin film NiO onto p-CdTe and n-CdTe substrates. The current-voltage characteristics of the heterojunctions were measured at room temperature. The dominating c...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Politehperiodika
2016-10-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2016/4-5_2016/pdf/04.pdf |
| Summary: | In this study, we investigate the electrical and photoelectric properties of heterostructures formed by the reactive magnetron sputtering of thin film NiO onto p-CdTe and n-CdTe substrates. The current-voltage characteristics of the heterojunctions were measured at room temperature. The dominating current transport mechanisms through the NiO/n-CdTe and NiO/p-CdTe heterojunctions at the forward biases are generation-recombination and tunnel, at the reverse biases is tunnel current transport mechanisms. The heterojunctions under investigation generate open-circuit voltage Uoc = 0.26 V and short-circuit current Isc = 58.7 μA/cm2 under illumination 80 mW/cm-2.
The research results can be used for better understanding of the processes occurring in heterojunctions NiO/ n-CdTe and NiO/p-CdTe, to further improve their properties and parameters. |
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| ISSN: | 2225-5818 2309-9992 |