Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells

Abstract Understanding the defect characteristics that occur near the space‐charge regions (SCRs) of kesterite (CZTSSe) solar cells is important because the recombination loss at the CZTSSe/CdS interface is considered the main cause of their low efficiency. CZTSSe surfaces with different elemental c...

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Main Authors: Dae‐Ho Son, Dong‐Hwan Jeon, Dae‐Hwan Kim, Jin‐Kyu Kang, Shi‐Joon Sung, Jaebaek Lee, Taeseon Lee, Enkhjargal Enkhbayar, JunHo Kim, Kee‐Jeong Yang
Format: Article
Language:English
Published: Wiley 2023-08-01
Series:Carbon Energy
Subjects:
Online Access:https://doi.org/10.1002/cey2.336
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author Dae‐Ho Son
Dong‐Hwan Jeon
Dae‐Hwan Kim
Jin‐Kyu Kang
Shi‐Joon Sung
Jaebaek Lee
Taeseon Lee
Enkhjargal Enkhbayar
JunHo Kim
Kee‐Jeong Yang
author_facet Dae‐Ho Son
Dong‐Hwan Jeon
Dae‐Hwan Kim
Jin‐Kyu Kang
Shi‐Joon Sung
Jaebaek Lee
Taeseon Lee
Enkhjargal Enkhbayar
JunHo Kim
Kee‐Jeong Yang
author_sort Dae‐Ho Son
collection DOAJ
description Abstract Understanding the defect characteristics that occur near the space‐charge regions (SCRs) of kesterite (CZTSSe) solar cells is important because the recombination loss at the CZTSSe/CdS interface is considered the main cause of their low efficiency. CZTSSe surfaces with different elemental compositions were formed without polishing (C00) and with polishing for 20 s (C20) and 60 s (C60). For C60, a specific region near the SCR was excessively Cu‐rich and Zn‐poor compared to C00 and C20. Various charged defects formed where the elemental variation was large. As the main deep acceptor defect energy level (Ea2) near the SCR increased, the efficiency, open‐circuit voltage deficit, and current density degraded, and this phenomenon was especially rapid for large Ea2 values. As the Ea2 near the SCR became deep, the carrier diffusion length decreased more for the CZTSSe solar cells with a low carrier mobility than for the CuInGaSe2 (CIGSe) solar cells. The large amplitude of the electrostatic potential fluctuation in the CZTSSe solar cells induced a high carrier recombination and a short carrier lifetime. Consequently, the properties of the CZTSSe solar cells were more strongly degraded by defects with deep energy levels near the SCR than those of the CIGSe solar cells.
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spelling doaj.art-2b90e44645494cc2bbb2e065b7f4e8d22023-08-28T08:53:45ZengWileyCarbon Energy2637-93682023-08-0158n/an/a10.1002/cey2.336Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cellsDae‐Ho Son0Dong‐Hwan Jeon1Dae‐Hwan Kim2Jin‐Kyu Kang3Shi‐Joon Sung4Jaebaek Lee5Taeseon Lee6Enkhjargal Enkhbayar7JunHo Kim8Kee‐Jeong Yang9Division of Energy Technology, DGIST Daegu Republic of KoreaDivision of Energy Technology, DGIST Daegu Republic of KoreaDivision of Energy Technology, DGIST Daegu Republic of KoreaDivision of Energy Technology, DGIST Daegu Republic of KoreaDivision of Energy Technology, DGIST Daegu Republic of KoreaDivision of Energy Technology, DGIST Daegu Republic of KoreaDepartment of Physics Incheon National University Incheon Republic of KoreaDepartment of Physics Incheon National University Incheon Republic of KoreaDepartment of Physics Incheon National University Incheon Republic of KoreaDivision of Energy Technology, DGIST Daegu Republic of KoreaAbstract Understanding the defect characteristics that occur near the space‐charge regions (SCRs) of kesterite (CZTSSe) solar cells is important because the recombination loss at the CZTSSe/CdS interface is considered the main cause of their low efficiency. CZTSSe surfaces with different elemental compositions were formed without polishing (C00) and with polishing for 20 s (C20) and 60 s (C60). For C60, a specific region near the SCR was excessively Cu‐rich and Zn‐poor compared to C00 and C20. Various charged defects formed where the elemental variation was large. As the main deep acceptor defect energy level (Ea2) near the SCR increased, the efficiency, open‐circuit voltage deficit, and current density degraded, and this phenomenon was especially rapid for large Ea2 values. As the Ea2 near the SCR became deep, the carrier diffusion length decreased more for the CZTSSe solar cells with a low carrier mobility than for the CuInGaSe2 (CIGSe) solar cells. The large amplitude of the electrostatic potential fluctuation in the CZTSSe solar cells induced a high carrier recombination and a short carrier lifetime. Consequently, the properties of the CZTSSe solar cells were more strongly degraded by defects with deep energy levels near the SCR than those of the CIGSe solar cells.https://doi.org/10.1002/cey2.336defect densitydefect energy levelelemental variationkesteritespace charge region
spellingShingle Dae‐Ho Son
Dong‐Hwan Jeon
Dae‐Hwan Kim
Jin‐Kyu Kang
Shi‐Joon Sung
Jaebaek Lee
Taeseon Lee
Enkhjargal Enkhbayar
JunHo Kim
Kee‐Jeong Yang
Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells
Carbon Energy
defect density
defect energy level
elemental variation
kesterite
space charge region
title Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells
title_full Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells
title_fullStr Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells
title_full_unstemmed Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells
title_short Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells
title_sort identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells
topic defect density
defect energy level
elemental variation
kesterite
space charge region
url https://doi.org/10.1002/cey2.336
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