Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells
Abstract Understanding the defect characteristics that occur near the space‐charge regions (SCRs) of kesterite (CZTSSe) solar cells is important because the recombination loss at the CZTSSe/CdS interface is considered the main cause of their low efficiency. CZTSSe surfaces with different elemental c...
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Wiley
2023-08-01
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Series: | Carbon Energy |
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Online Access: | https://doi.org/10.1002/cey2.336 |
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author | Dae‐Ho Son Dong‐Hwan Jeon Dae‐Hwan Kim Jin‐Kyu Kang Shi‐Joon Sung Jaebaek Lee Taeseon Lee Enkhjargal Enkhbayar JunHo Kim Kee‐Jeong Yang |
author_facet | Dae‐Ho Son Dong‐Hwan Jeon Dae‐Hwan Kim Jin‐Kyu Kang Shi‐Joon Sung Jaebaek Lee Taeseon Lee Enkhjargal Enkhbayar JunHo Kim Kee‐Jeong Yang |
author_sort | Dae‐Ho Son |
collection | DOAJ |
description | Abstract Understanding the defect characteristics that occur near the space‐charge regions (SCRs) of kesterite (CZTSSe) solar cells is important because the recombination loss at the CZTSSe/CdS interface is considered the main cause of their low efficiency. CZTSSe surfaces with different elemental compositions were formed without polishing (C00) and with polishing for 20 s (C20) and 60 s (C60). For C60, a specific region near the SCR was excessively Cu‐rich and Zn‐poor compared to C00 and C20. Various charged defects formed where the elemental variation was large. As the main deep acceptor defect energy level (Ea2) near the SCR increased, the efficiency, open‐circuit voltage deficit, and current density degraded, and this phenomenon was especially rapid for large Ea2 values. As the Ea2 near the SCR became deep, the carrier diffusion length decreased more for the CZTSSe solar cells with a low carrier mobility than for the CuInGaSe2 (CIGSe) solar cells. The large amplitude of the electrostatic potential fluctuation in the CZTSSe solar cells induced a high carrier recombination and a short carrier lifetime. Consequently, the properties of the CZTSSe solar cells were more strongly degraded by defects with deep energy levels near the SCR than those of the CIGSe solar cells. |
first_indexed | 2024-03-12T13:08:06Z |
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id | doaj.art-2b90e44645494cc2bbb2e065b7f4e8d2 |
institution | Directory Open Access Journal |
issn | 2637-9368 |
language | English |
last_indexed | 2024-03-12T13:08:06Z |
publishDate | 2023-08-01 |
publisher | Wiley |
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series | Carbon Energy |
spelling | doaj.art-2b90e44645494cc2bbb2e065b7f4e8d22023-08-28T08:53:45ZengWileyCarbon Energy2637-93682023-08-0158n/an/a10.1002/cey2.336Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cellsDae‐Ho Son0Dong‐Hwan Jeon1Dae‐Hwan Kim2Jin‐Kyu Kang3Shi‐Joon Sung4Jaebaek Lee5Taeseon Lee6Enkhjargal Enkhbayar7JunHo Kim8Kee‐Jeong Yang9Division of Energy Technology, DGIST Daegu Republic of KoreaDivision of Energy Technology, DGIST Daegu Republic of KoreaDivision of Energy Technology, DGIST Daegu Republic of KoreaDivision of Energy Technology, DGIST Daegu Republic of KoreaDivision of Energy Technology, DGIST Daegu Republic of KoreaDivision of Energy Technology, DGIST Daegu Republic of KoreaDepartment of Physics Incheon National University Incheon Republic of KoreaDepartment of Physics Incheon National University Incheon Republic of KoreaDepartment of Physics Incheon National University Incheon Republic of KoreaDivision of Energy Technology, DGIST Daegu Republic of KoreaAbstract Understanding the defect characteristics that occur near the space‐charge regions (SCRs) of kesterite (CZTSSe) solar cells is important because the recombination loss at the CZTSSe/CdS interface is considered the main cause of their low efficiency. CZTSSe surfaces with different elemental compositions were formed without polishing (C00) and with polishing for 20 s (C20) and 60 s (C60). For C60, a specific region near the SCR was excessively Cu‐rich and Zn‐poor compared to C00 and C20. Various charged defects formed where the elemental variation was large. As the main deep acceptor defect energy level (Ea2) near the SCR increased, the efficiency, open‐circuit voltage deficit, and current density degraded, and this phenomenon was especially rapid for large Ea2 values. As the Ea2 near the SCR became deep, the carrier diffusion length decreased more for the CZTSSe solar cells with a low carrier mobility than for the CuInGaSe2 (CIGSe) solar cells. The large amplitude of the electrostatic potential fluctuation in the CZTSSe solar cells induced a high carrier recombination and a short carrier lifetime. Consequently, the properties of the CZTSSe solar cells were more strongly degraded by defects with deep energy levels near the SCR than those of the CIGSe solar cells.https://doi.org/10.1002/cey2.336defect densitydefect energy levelelemental variationkesteritespace charge region |
spellingShingle | Dae‐Ho Son Dong‐Hwan Jeon Dae‐Hwan Kim Jin‐Kyu Kang Shi‐Joon Sung Jaebaek Lee Taeseon Lee Enkhjargal Enkhbayar JunHo Kim Kee‐Jeong Yang Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells Carbon Energy defect density defect energy level elemental variation kesterite space charge region |
title | Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells |
title_full | Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells |
title_fullStr | Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells |
title_full_unstemmed | Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells |
title_short | Identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells |
title_sort | identifying the relationships between subsurface absorber defects and the characteristics of kesterite solar cells |
topic | defect density defect energy level elemental variation kesterite space charge region |
url | https://doi.org/10.1002/cey2.336 |
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