Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment
An enhancement of the electrical performance of the InAlN/GaN high electron mobility transistors (HEMTs) is demonstrated by the incorporation of post bis(trifluoromethane) sulfonamide (TFSI) treatment. The surface treatment of TFSI solution results in the increase of 2DEG electron mobility from 1180...
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MDPI AG
2022-10-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/11/1521 |
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| author | Siheng Chen Peng Cui Mingsheng Xu Zhaojun Lin Xiangang Xu Yuping Zeng Jisheng Han |
| author_facet | Siheng Chen Peng Cui Mingsheng Xu Zhaojun Lin Xiangang Xu Yuping Zeng Jisheng Han |
| author_sort | Siheng Chen |
| collection | DOAJ |
| description | An enhancement of the electrical performance of the InAlN/GaN high electron mobility transistors (HEMTs) is demonstrated by the incorporation of post bis(trifluoromethane) sulfonamide (TFSI) treatment. The surface treatment of TFSI solution results in the increase of 2DEG electron mobility from 1180 to 1500 cm<sup>2</sup>/Vs and thus a reduction of on-state resistance and an increase in transconductance. The results indicate that the positive charge of H<sup>+</sup> will decrease the polarization charges of the InAlN barrier under the access region due to the converse piezoelectric effect, leading to the reduced polarization Coulomb field (PCF) scattering in InAlN/GaN HEMT. This offers a possible way to improve the electron mobility and device performance of InAlN/GaN HEMTs for further application. |
| first_indexed | 2024-03-09T19:10:07Z |
| format | Article |
| id | doaj.art-2bfc25d6d8b4406d906e665efedcf3f3 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T19:10:07Z |
| publishDate | 2022-10-01 |
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| record_format | Article |
| series | Crystals |
| spelling | doaj.art-2bfc25d6d8b4406d906e665efedcf3f32023-11-24T04:14:29ZengMDPI AGCrystals2073-43522022-10-011211152110.3390/cryst12111521Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide TreatmentSiheng Chen0Peng Cui1Mingsheng Xu2Zhaojun Lin3Xiangang Xu4Yuping Zeng5Jisheng Han6Institute of Novel Semiconductors, School of Microelectronics, Shandong University, Jinan 250100, ChinaInstitute of Novel Semiconductors, School of Microelectronics, Shandong University, Jinan 250100, ChinaInstitute of Novel Semiconductors, School of Microelectronics, Shandong University, Jinan 250100, ChinaInstitute of Novel Semiconductors, School of Microelectronics, Shandong University, Jinan 250100, ChinaInstitute of Novel Semiconductors, School of Microelectronics, Shandong University, Jinan 250100, ChinaDepartment of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716, USAInstitute of Novel Semiconductors, School of Microelectronics, Shandong University, Jinan 250100, ChinaAn enhancement of the electrical performance of the InAlN/GaN high electron mobility transistors (HEMTs) is demonstrated by the incorporation of post bis(trifluoromethane) sulfonamide (TFSI) treatment. The surface treatment of TFSI solution results in the increase of 2DEG electron mobility from 1180 to 1500 cm<sup>2</sup>/Vs and thus a reduction of on-state resistance and an increase in transconductance. The results indicate that the positive charge of H<sup>+</sup> will decrease the polarization charges of the InAlN barrier under the access region due to the converse piezoelectric effect, leading to the reduced polarization Coulomb field (PCF) scattering in InAlN/GaN HEMT. This offers a possible way to improve the electron mobility and device performance of InAlN/GaN HEMTs for further application.https://www.mdpi.com/2073-4352/12/11/1521InAlN/GaN HEMTelectrical performancebis(trifluoromethane) sulfonamideelectron mobilityscattering |
| spellingShingle | Siheng Chen Peng Cui Mingsheng Xu Zhaojun Lin Xiangang Xu Yuping Zeng Jisheng Han Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment Crystals InAlN/GaN HEMT electrical performance bis(trifluoromethane) sulfonamide electron mobility scattering |
| title | Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment |
| title_full | Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment |
| title_fullStr | Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment |
| title_full_unstemmed | Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment |
| title_short | Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment |
| title_sort | improved electrical performance of inaln gan high electron mobility transistors with post bis trifluoromethane sulfonamide treatment |
| topic | InAlN/GaN HEMT electrical performance bis(trifluoromethane) sulfonamide electron mobility scattering |
| url | https://www.mdpi.com/2073-4352/12/11/1521 |
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