Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map
Memristors were proposed in the early 1970s by Leon Chua as a new electrical element linking charge to flux. Since that first introduction, these devices have positioned themselves to be considered as possible fundamental ones for the generations of electronic devices to come. In this paper, we prop...
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MDPI AG
2022-05-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/11/11/1672 |
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| author | Rodrigo Picos Stavros G. Stavrinides Mohamad Moner Al Chawa Carola de Benito Salvador Dueñas Helena Castan Euripides Hatzikraniotis Leon O. Chua |
| author_facet | Rodrigo Picos Stavros G. Stavrinides Mohamad Moner Al Chawa Carola de Benito Salvador Dueñas Helena Castan Euripides Hatzikraniotis Leon O. Chua |
| author_sort | Rodrigo Picos |
| collection | DOAJ |
| description | Memristors were proposed in the early 1970s by Leon Chua as a new electrical element linking charge to flux. Since that first introduction, these devices have positioned themselves to be considered as possible fundamental ones for the generations of electronic devices to come. In this paper, we propose a new way to investigate the effects of the electrical variables on the memristance of a device, and we successfully apply this technique to model the behavior of a TiN/Ti/HfO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>/W ReRAM structure. To do so, we initially apply the Dynamic Route Map technique in the general case to obtain an approximation to the differential equation that determines the behaviour of the device. This is performed by choosing a variable of interest and observing the evolution of its own temporal derivative versus both its value and the applied voltage. Then, according to this technique, it is possible to obtain an approach to the governing equations with no need to make any assumption about the underlying physical mechanisms, by fitting a function to this. We have used a polynomial function, which allows accurate reproduction of the observed electrical behavior of the measured devices, by integrating the resulting differential equation system. |
| first_indexed | 2024-03-10T01:23:38Z |
| format | Article |
| id | doaj.art-2c0bdaa9674f4ad5b9f7a0ff852db123 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T01:23:38Z |
| publishDate | 2022-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-2c0bdaa9674f4ad5b9f7a0ff852db1232023-11-23T13:53:59ZengMDPI AGElectronics2079-92922022-05-011111167210.3390/electronics11111672Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route MapRodrigo Picos0Stavros G. Stavrinides1Mohamad Moner Al Chawa2Carola de Benito3Salvador Dueñas4Helena Castan5Euripides Hatzikraniotis6Leon O. Chua7Industrial Engineering and Construction Department, Balearic Islands University, 07122 Palma, SpainSchool of Science and Technology, International Hellenic University, Thermi, 57001 Thessaloniki, GreeceInstitute of Circuits and Systems, Technische Universität Dresden, 01062 Dresden, GermanyIndustrial Engineering and Construction Department, Balearic Islands University, 07122 Palma, SpainFacultad de Ciencias, Universidad de Valladolid, 47011 Valladolid, SpainFacultad de Ciencias, Universidad de Valladolid, 47011 Valladolid, SpainPhysics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki, GreeceDepartment of Electrical Engineering and Computer Sciences, University of Californa, Berkeley, CA 94720, USAMemristors were proposed in the early 1970s by Leon Chua as a new electrical element linking charge to flux. Since that first introduction, these devices have positioned themselves to be considered as possible fundamental ones for the generations of electronic devices to come. In this paper, we propose a new way to investigate the effects of the electrical variables on the memristance of a device, and we successfully apply this technique to model the behavior of a TiN/Ti/HfO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>/W ReRAM structure. To do so, we initially apply the Dynamic Route Map technique in the general case to obtain an approximation to the differential equation that determines the behaviour of the device. This is performed by choosing a variable of interest and observing the evolution of its own temporal derivative versus both its value and the applied voltage. Then, according to this technique, it is possible to obtain an approach to the governing equations with no need to make any assumption about the underlying physical mechanisms, by fitting a function to this. We have used a polynomial function, which allows accurate reproduction of the observed electrical behavior of the measured devices, by integrating the resulting differential equation system.https://www.mdpi.com/2079-9292/11/11/1672memristorRRAMcompact modelingcharge and fluxphase space |
| spellingShingle | Rodrigo Picos Stavros G. Stavrinides Mohamad Moner Al Chawa Carola de Benito Salvador Dueñas Helena Castan Euripides Hatzikraniotis Leon O. Chua Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map Electronics memristor RRAM compact modeling charge and flux phase space |
| title | Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map |
| title_full | Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map |
| title_fullStr | Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map |
| title_full_unstemmed | Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map |
| title_short | Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map |
| title_sort | empirical characterization of reram devices using memory maps and a dynamic route map |
| topic | memristor RRAM compact modeling charge and flux phase space |
| url | https://www.mdpi.com/2079-9292/11/11/1672 |
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