Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells
In this work, the photoluminescence (PL) properties of three as-grown InGaN/GaN multiple quantum well (MQW) structures which are heat-treated under different temperatures with nitrogen (N<sub>2</sub>) atmosphere are investigated. Temperature-dependent photoluminescence (PL) analysis was...
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MDPI AG
2022-06-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/6/839 |
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| author | Yachen Wang Feng Liang Degang Zhao Yuhao Ben Jing Yang Zongshun Liu Ping Chen |
| author_facet | Yachen Wang Feng Liang Degang Zhao Yuhao Ben Jing Yang Zongshun Liu Ping Chen |
| author_sort | Yachen Wang |
| collection | DOAJ |
| description | In this work, the photoluminescence (PL) properties of three as-grown InGaN/GaN multiple quantum well (MQW) structures which are heat-treated under different temperatures with nitrogen (N<sub>2</sub>) atmosphere are investigated. Temperature-dependent photoluminescence (PL) analysis was used to characterize the depth of localized states and defect density formed in MQWs. By fitting the positions of luminescence peaks with an LSE model, we find that deeper localized states are formed in the MQWs after high-temperature treatment. The experimental results show that the luminescence intensity of the sample heat-treated at 880 °C is significantly improved, which may be due to the shielding effect of In clusters on defects. While the luminescence efficiency decreases because of the higher defect density caused by the decomposition of the InGaN QW layer when the sample is heat-treated at 1020 °C. Moreover, the atomic force microscope results show that the increase in heat-treatment temperature leads to an increase in the width of surface steps due to the rearrangement of surface atoms in a high-temperature environment. |
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| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T00:03:01Z |
| publishDate | 2022-06-01 |
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| series | Crystals |
| spelling | doaj.art-2c35c62e87aa40ffb16961d0a8eec76a2023-11-23T16:12:47ZengMDPI AGCrystals2073-43522022-06-0112683910.3390/cryst12060839Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum WellsYachen Wang0Feng Liang1Degang Zhao2Yuhao Ben3Jing Yang4Zongshun Liu5Ping Chen6State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaIn this work, the photoluminescence (PL) properties of three as-grown InGaN/GaN multiple quantum well (MQW) structures which are heat-treated under different temperatures with nitrogen (N<sub>2</sub>) atmosphere are investigated. Temperature-dependent photoluminescence (PL) analysis was used to characterize the depth of localized states and defect density formed in MQWs. By fitting the positions of luminescence peaks with an LSE model, we find that deeper localized states are formed in the MQWs after high-temperature treatment. The experimental results show that the luminescence intensity of the sample heat-treated at 880 °C is significantly improved, which may be due to the shielding effect of In clusters on defects. While the luminescence efficiency decreases because of the higher defect density caused by the decomposition of the InGaN QW layer when the sample is heat-treated at 1020 °C. Moreover, the atomic force microscope results show that the increase in heat-treatment temperature leads to an increase in the width of surface steps due to the rearrangement of surface atoms in a high-temperature environment.https://www.mdpi.com/2073-4352/12/6/839InGaN quantum wellphotoluminescencelocalized stateshigh-temperature treatment |
| spellingShingle | Yachen Wang Feng Liang Degang Zhao Yuhao Ben Jing Yang Zongshun Liu Ping Chen Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells Crystals InGaN quantum well photoluminescence localized states high-temperature treatment |
| title | Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells |
| title_full | Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells |
| title_fullStr | Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells |
| title_full_unstemmed | Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells |
| title_short | Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells |
| title_sort | effect of high temperature treatment on the photoluminescence of ingan multiple quantum wells |
| topic | InGaN quantum well photoluminescence localized states high-temperature treatment |
| url | https://www.mdpi.com/2073-4352/12/6/839 |
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