Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells

Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells

In this work, the photoluminescence (PL) properties of three as-grown InGaN/GaN multiple quantum well (MQW) structures which are heat-treated under different temperatures with nitrogen (N<sub>2</sub>) atmosphere are investigated. Temperature-dependent photoluminescence (PL) analysis was...

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Bibliographic Details
Main Authors: Yachen Wang, Feng Liang, Degang Zhao, Yuhao Ben, Jing Yang, Zongshun Liu, Ping Chen
Format: Article
Language:English
Published: MDPI AG 2022-06-01
Series:Crystals
Subjects:
InGaN quantum well
photoluminescence
localized states
high-temperature treatment
Online Access:https://www.mdpi.com/2073-4352/12/6/839

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