Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO<sub>2</sub> Detection
Colloidal quantum dots (CQDs) are gaining increasing attention for gas sensing applications due to their large surface area and abundant active sites. However, traditional resistor-type gas sensors using CQDs to realize molecule recognition and signal transduction at the same time are associated wit...
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| Format: | Article |
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MDPI AG
2023-04-01
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| Series: | Chemosensors |
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| Online Access: | https://www.mdpi.com/2227-9040/11/4/252 |
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| author | Zhixiang Hu Licheng Zhou Long Li Binzhou Ying Yunong Zhao Peng Wang Huayao Li Yang Zhang Huan Liu |
| author_facet | Zhixiang Hu Licheng Zhou Long Li Binzhou Ying Yunong Zhao Peng Wang Huayao Li Yang Zhang Huan Liu |
| author_sort | Zhixiang Hu |
| collection | DOAJ |
| description | Colloidal quantum dots (CQDs) are gaining increasing attention for gas sensing applications due to their large surface area and abundant active sites. However, traditional resistor-type gas sensors using CQDs to realize molecule recognition and signal transduction at the same time are associated with the trade-off between sensitivity and conductivity. This limitation has restricted their range of practical applications. In this study, we propose and demonstrate a monolithically integrated field-effect transistor (FET) gas sensor. This novel FET-type gas sensor utilizes the capacitance coupling effect of the CQD sensing film based on a floating gate, and the quantum capacitance plays a role in the capacitance response of the CQD sensing film. By effectively separating the gate sensing film from the two-dimensional electron gas (2DEG) conduction channel, the lead sulfide (PbS) CQD gate-sensitized FET gas sensor offers high sensitivity, a high signal-to-noise ratio, and a wide range, with a real-time response of sub-ppb NO<sub>2</sub>. This work highlights the potential of quantum dot-sensitized FET gas sensors as a practical solution for integrated gas sensor chip applications using CQDs. |
| first_indexed | 2024-03-11T05:07:47Z |
| format | Article |
| id | doaj.art-2c653db50814488a8f440e4d6322b892 |
| institution | Directory Open Access Journal |
| issn | 2227-9040 |
| language | English |
| last_indexed | 2024-03-11T05:07:47Z |
| publishDate | 2023-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Chemosensors |
| spelling | doaj.art-2c653db50814488a8f440e4d6322b8922023-11-17T18:45:01ZengMDPI AGChemosensors2227-90402023-04-0111425210.3390/chemosensors11040252Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO<sub>2</sub> DetectionZhixiang Hu0Licheng Zhou1Long Li2Binzhou Ying3Yunong Zhao4Peng Wang5Huayao Li6Yang Zhang7Huan Liu8School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, Wuhan 430074, ChinaSchool of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, Wuhan 430074, ChinaSchool of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, Wuhan 430074, ChinaSchool of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, Wuhan 430074, ChinaSchool of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, Wuhan 430074, ChinaSchool of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, Wuhan 430074, ChinaSchool of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, Wuhan 430074, ChinaKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaSchool of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Optics Valley Laboratory, Huazhong University of Science and Technology, Wuhan 430074, ChinaColloidal quantum dots (CQDs) are gaining increasing attention for gas sensing applications due to their large surface area and abundant active sites. However, traditional resistor-type gas sensors using CQDs to realize molecule recognition and signal transduction at the same time are associated with the trade-off between sensitivity and conductivity. This limitation has restricted their range of practical applications. In this study, we propose and demonstrate a monolithically integrated field-effect transistor (FET) gas sensor. This novel FET-type gas sensor utilizes the capacitance coupling effect of the CQD sensing film based on a floating gate, and the quantum capacitance plays a role in the capacitance response of the CQD sensing film. By effectively separating the gate sensing film from the two-dimensional electron gas (2DEG) conduction channel, the lead sulfide (PbS) CQD gate-sensitized FET gas sensor offers high sensitivity, a high signal-to-noise ratio, and a wide range, with a real-time response of sub-ppb NO<sub>2</sub>. This work highlights the potential of quantum dot-sensitized FET gas sensors as a practical solution for integrated gas sensor chip applications using CQDs.https://www.mdpi.com/2227-9040/11/4/252colloidal quantum dotPbSFET-type gas sensorligand exchangecapacitance |
| spellingShingle | Zhixiang Hu Licheng Zhou Long Li Binzhou Ying Yunong Zhao Peng Wang Huayao Li Yang Zhang Huan Liu Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO<sub>2</sub> Detection Chemosensors colloidal quantum dot PbS FET-type gas sensor ligand exchange capacitance |
| title | Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO<sub>2</sub> Detection |
| title_full | Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO<sub>2</sub> Detection |
| title_fullStr | Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO<sub>2</sub> Detection |
| title_full_unstemmed | Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO<sub>2</sub> Detection |
| title_short | Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO<sub>2</sub> Detection |
| title_sort | quantum dots sensitized high electron mobility transistor hemt for sensitive no sub 2 sub detection |
| topic | colloidal quantum dot PbS FET-type gas sensor ligand exchange capacitance |
| url | https://www.mdpi.com/2227-9040/11/4/252 |
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