Study of the Density of States Distribution in the SiO2/Si Structure
Interface properties of Al/SiO2 /Si MOS structures with NAOS oxide layer were analyzed by the construction of the capacitance-voltage model with the interface states. Energy distributions associated with the localized states in silicon band gap were modeled by the Gaussian distribution. Energy level...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
University of Žilina
2010-06-01
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| Series: | Communications |
| Subjects: | |
| Online Access: | https://komunikacie.uniza.sk/artkey/csl-201002-0012_study-of-the-density-of-states-distribution-in-the-sio2-si-structure.php |