Boosting the photodetection of bulk aluminum nitride crystals-based MSM device through an additional electrode
Aluminum nitride (AlN) exhibits excellent high-temperature resistance, chemical stability, and a wide bandgap, making it a prime candidate material for deep ultraviolet detectors. In this study, a modified metal–semiconductor–metal (MSM) photodetector using titanium (Ti) electrodes and millimeter-sc...
| Huvudupphovsmän: | , , , , , , |
|---|---|
| Materialtyp: | Artikel |
| Språk: | English |
| Publicerad: |
AIP Publishing LLC
2023-10-01
|
| Serie: | APL Materials |
| Länkar: | http://dx.doi.org/10.1063/5.0173327 |