Effect of atomic structure on the electrical response of aluminum oxide tunnel junctions
Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit parameters in these junctions are affected by the uniformity, m...
Main Authors: | M. J. Cyster, J. S. Smith, J. A. Vaitkus, N. Vogt, S. P. Russo, J. H. Cole |
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Format: | Article |
Language: | English |
Published: |
American Physical Society
2020-01-01
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Series: | Physical Review Research |
Online Access: | http://doi.org/10.1103/PhysRevResearch.2.013110 |
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