A review on TSV reliability
This paper reviews the reliability of TSV(through silicon via) in three aspects: thermal stress, process and piezoresistive effect. The thermal stress reliability of TSV is reflected in the great difference of thermal expansion coefficient between different materials, too large thermal stress may le...
| Main Authors: | , , |
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| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2021-02-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000128861 |
| Summary: | This paper reviews the reliability of TSV(through silicon via) in three aspects: thermal stress, process and piezoresistive effect. The thermal stress reliability of TSV is reflected in the great difference of thermal expansion coefficient between different materials, too large thermal stress may lead to interface delamination and cracks; the reliability of TSV process is reflected in the continuity of side wall and the quality of filled copper; the carrier mobility in the active region will be affected by the thermal stress of TSV. A KOZ(keep out zone) area around TSV is defined. The KOZ is set to the region where the carrier mobility does not exceed 5%. When the carrier mobility exceeds 5%, the timing of the circuit may be destroyed and the integrated circuit will fail. |
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| ISSN: | 0258-7998 |