A review on TSV reliability
This paper reviews the reliability of TSV(through silicon via) in three aspects: thermal stress, process and piezoresistive effect. The thermal stress reliability of TSV is reflected in the great difference of thermal expansion coefficient between different materials, too large thermal stress may le...
| Main Authors: | , , |
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| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2021-02-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000128861 |
| _version_ | 1818921669546213376 |
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| author | Wang Shuo Ma Kui Yang Fashun |
| author_facet | Wang Shuo Ma Kui Yang Fashun |
| author_sort | Wang Shuo |
| collection | DOAJ |
| description | This paper reviews the reliability of TSV(through silicon via) in three aspects: thermal stress, process and piezoresistive effect. The thermal stress reliability of TSV is reflected in the great difference of thermal expansion coefficient between different materials, too large thermal stress may lead to interface delamination and cracks; the reliability of TSV process is reflected in the continuity of side wall and the quality of filled copper; the carrier mobility in the active region will be affected by the thermal stress of TSV. A KOZ(keep out zone) area around TSV is defined. The KOZ is set to the region where the carrier mobility does not exceed 5%. When the carrier mobility exceeds 5%, the timing of the circuit may be destroyed and the integrated circuit will fail. |
| first_indexed | 2024-12-20T01:41:19Z |
| format | Article |
| id | doaj.art-2cfa5bce20ee477e965b4010ae364381 |
| institution | Directory Open Access Journal |
| issn | 0258-7998 |
| language | zho |
| last_indexed | 2024-12-20T01:41:19Z |
| publishDate | 2021-02-01 |
| publisher | National Computer System Engineering Research Institute of China |
| record_format | Article |
| series | Dianzi Jishu Yingyong |
| spelling | doaj.art-2cfa5bce20ee477e965b4010ae3643812022-12-21T19:57:53ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982021-02-014721610.16157/j.issn.0258-7998.2007673000128861A review on TSV reliabilityWang Shuo0Ma Kui1Yang Fashun2College of Big Data and Information Engineering，Guizhou University，Guiyang 550025，ChinaCollege of Big Data and Information Engineering，Guizhou University，Guiyang 550025，ChinaCollege of Big Data and Information Engineering，Guizhou University，Guiyang 550025，ChinaThis paper reviews the reliability of TSV(through silicon via) in three aspects: thermal stress, process and piezoresistive effect. The thermal stress reliability of TSV is reflected in the great difference of thermal expansion coefficient between different materials, too large thermal stress may lead to interface delamination and cracks; the reliability of TSV process is reflected in the continuity of side wall and the quality of filled copper; the carrier mobility in the active region will be affected by the thermal stress of TSV. A KOZ(keep out zone) area around TSV is defined. The KOZ is set to the region where the carrier mobility does not exceed 5%. When the carrier mobility exceeds 5%, the timing of the circuit may be destroyed and the integrated circuit will fail.http://www.chinaaet.com/article/3000128861tsvkozthe thermal stresscoefficient of thermal expansion |
| spellingShingle | Wang Shuo Ma Kui Yang Fashun A review on TSV reliability Dianzi Jishu Yingyong tsv koz the thermal stress coefficient of thermal expansion |
| title | A review on TSV reliability |
| title_full | A review on TSV reliability |
| title_fullStr | A review on TSV reliability |
| title_full_unstemmed | A review on TSV reliability |
| title_short | A review on TSV reliability |
| title_sort | review on tsv reliability |
| topic | tsv koz the thermal stress coefficient of thermal expansion |
| url | http://www.chinaaet.com/article/3000128861 |
| work_keys_str_mv | AT wangshuo areviewontsvreliability AT makui areviewontsvreliability AT yangfashun areviewontsvreliability AT wangshuo reviewontsvreliability AT makui reviewontsvreliability AT yangfashun reviewontsvreliability |