Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam

Both silicon and graphite are radiation hard materials with respect to swift heavy ions like fission fragments and cosmic rays. Recrystallisation is considered to be the main mechanism of prompt damage anneal in these two materials, resulting in negligible amounts of damage produced, even when expos...

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Main Authors: Kristina Tomić Luketić, Marko Karlušić, Andreja Gajović, Stjepko Fazinić, Jacques H. O’Connell, Borna Pielić, Borna Radatović, Marko Kralj
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/14/8/1904
_version_ 1797538045275144192
author Kristina Tomić Luketić
Marko Karlušić
Andreja Gajović
Stjepko Fazinić
Jacques H. O’Connell
Borna Pielić
Borna Radatović
Marko Kralj
author_facet Kristina Tomić Luketić
Marko Karlušić
Andreja Gajović
Stjepko Fazinić
Jacques H. O’Connell
Borna Pielić
Borna Radatović
Marko Kralj
author_sort Kristina Tomić Luketić
collection DOAJ
description Both silicon and graphite are radiation hard materials with respect to swift heavy ions like fission fragments and cosmic rays. Recrystallisation is considered to be the main mechanism of prompt damage anneal in these two materials, resulting in negligible amounts of damage produced, even when exposed to high ion fluences. In this work we present evidence that these two materials could be susceptible to swift heavy ion irradiation effects even at low energies. In the case of silicon, ion channeling and electron microscopy measurements reveal significant recovery of pre-existing defects when exposed to a swift heavy ion beam. In the case of graphite, by using ion channeling, Raman spectroscopy and atomic force microscopy, we found that the surface of the material is more prone to irradiation damage than the bulk.
first_indexed 2024-03-10T12:24:53Z
format Article
id doaj.art-2d02ac6634324a4ebc4dbb9bab089546
institution Directory Open Access Journal
issn 1996-1944
language English
last_indexed 2024-03-10T12:24:53Z
publishDate 2021-04-01
publisher MDPI AG
record_format Article
series Materials
spelling doaj.art-2d02ac6634324a4ebc4dbb9bab0895462023-11-21T15:04:29ZengMDPI AGMaterials1996-19442021-04-01148190410.3390/ma14081904Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I BeamKristina Tomić Luketić0Marko Karlušić1Andreja Gajović2Stjepko Fazinić3Jacques H. O’Connell4Borna Pielić5Borna Radatović6Marko Kralj7Ruđer Bošković Institute, Bijenička Cesta 54, 10000 Zagreb, CroatiaRuđer Bošković Institute, Bijenička Cesta 54, 10000 Zagreb, CroatiaRuđer Bošković Institute, Bijenička Cesta 54, 10000 Zagreb, CroatiaRuđer Bošković Institute, Bijenička Cesta 54, 10000 Zagreb, CroatiaNelson Mandela University, University Way, Summerstrand, Port Elizabeth 6001, South AfricaInstitute of Physics, Bijenička Cesta 46, 10000 Zagreb, CroatiaInstitute of Physics, Bijenička Cesta 46, 10000 Zagreb, CroatiaInstitute of Physics, Bijenička Cesta 46, 10000 Zagreb, CroatiaBoth silicon and graphite are radiation hard materials with respect to swift heavy ions like fission fragments and cosmic rays. Recrystallisation is considered to be the main mechanism of prompt damage anneal in these two materials, resulting in negligible amounts of damage produced, even when exposed to high ion fluences. In this work we present evidence that these two materials could be susceptible to swift heavy ion irradiation effects even at low energies. In the case of silicon, ion channeling and electron microscopy measurements reveal significant recovery of pre-existing defects when exposed to a swift heavy ion beam. In the case of graphite, by using ion channeling, Raman spectroscopy and atomic force microscopy, we found that the surface of the material is more prone to irradiation damage than the bulk.https://www.mdpi.com/1996-1944/14/8/1904swift heavy ionion trackRBS/cAFMTEMRaman spectroscopy
spellingShingle Kristina Tomić Luketić
Marko Karlušić
Andreja Gajović
Stjepko Fazinić
Jacques H. O’Connell
Borna Pielić
Borna Radatović
Marko Kralj
Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam
Materials
swift heavy ion
ion track
RBS/c
AFM
TEM
Raman spectroscopy
title Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam
title_full Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam
title_fullStr Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam
title_full_unstemmed Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam
title_short Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam
title_sort investigation of ion irradiation effects in silicon and graphite produced by 23 mev i beam
topic swift heavy ion
ion track
RBS/c
AFM
TEM
Raman spectroscopy
url https://www.mdpi.com/1996-1944/14/8/1904
work_keys_str_mv AT kristinatomicluketic investigationofionirradiationeffectsinsiliconandgraphiteproducedby23mevibeam
AT markokarlusic investigationofionirradiationeffectsinsiliconandgraphiteproducedby23mevibeam
AT andrejagajovic investigationofionirradiationeffectsinsiliconandgraphiteproducedby23mevibeam
AT stjepkofazinic investigationofionirradiationeffectsinsiliconandgraphiteproducedby23mevibeam
AT jacqueshoconnell investigationofionirradiationeffectsinsiliconandgraphiteproducedby23mevibeam
AT bornapielic investigationofionirradiationeffectsinsiliconandgraphiteproducedby23mevibeam
AT bornaradatovic investigationofionirradiationeffectsinsiliconandgraphiteproducedby23mevibeam
AT markokralj investigationofionirradiationeffectsinsiliconandgraphiteproducedby23mevibeam