Intrinsic Control in Defects Density for Improved ZnO Nanorod-Based UV Sensor Performance

Hitherto, most research has primarily focused on improving the UV sensor efficiency via surface treatments and by stimulating the ZnO nanorod (ZNR) surface Schottky barriers. However, to the best of our knowledge, no study has yet probed the intrinsic crystal defect generation and its effects on UV...

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Main Authors: Abu ul Hassan Sarwar Rana, Shoyebmohamad F. Shaikh, Abdullah M. Al-Enizi, Daniel Adjei Agyeman, Faizan Ghani, In Wook Nah, Areej Shahid
Format: Article
Language:English
Published: MDPI AG 2020-01-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/10/1/142
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author Abu ul Hassan Sarwar Rana
Shoyebmohamad F. Shaikh
Abdullah M. Al-Enizi
Daniel Adjei Agyeman
Faizan Ghani
In Wook Nah
Areej Shahid
author_facet Abu ul Hassan Sarwar Rana
Shoyebmohamad F. Shaikh
Abdullah M. Al-Enizi
Daniel Adjei Agyeman
Faizan Ghani
In Wook Nah
Areej Shahid
author_sort Abu ul Hassan Sarwar Rana
collection DOAJ
description Hitherto, most research has primarily focused on improving the UV sensor efficiency via surface treatments and by stimulating the ZnO nanorod (ZNR) surface Schottky barriers. However, to the best of our knowledge, no study has yet probed the intrinsic crystal defect generation and its effects on UV sensor efficiency. In this study, we undertake this task by fabricating an intrinsic defect-prone hydrothermally grown ZNRs (S1), Ga-doped ZNRs (S2), and defect-free microwave-assisted grown ZNRs (S3). The defect states were recognized by studying X-ray diffraction and photoluminescence characteristics. The large number of crystal defects in S1 and S2 had two pronged disadvantages. (1) Most of the UV light was absorbed by the defect traps and the e−h pair generation was compromised. (2) Mobility was directly affected by the carrier−carrier scattering and phonon scattering processes. Hence, the overall UV sensor efficiency was compromised based on the defect-induced mobility-response model. Considering the facts, defect-free S3 exhibited the best UV sensor performance with the highest on/off ratio, the least impulse response time, the highest recombination time, and highest gain-induced responsivity to 368 nm UV light, which was desired of an efficient passive metal oxide-based UV sensor. Our results were compared with the recently published results.
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spelling doaj.art-2d02b0ffb5a943ca9b147a756c87d2802022-12-22T01:47:03ZengMDPI AGNanomaterials2079-49912020-01-0110114210.3390/nano10010142nano10010142Intrinsic Control in Defects Density for Improved ZnO Nanorod-Based UV Sensor PerformanceAbu ul Hassan Sarwar Rana0Shoyebmohamad F. Shaikh1Abdullah M. Al-Enizi2Daniel Adjei Agyeman3Faizan Ghani4In Wook Nah5Areej Shahid6Intelligent Mechatronics Engineering/Smart Device Engineering, Sejong University, Seoul 05006, KoreaDepartment of Chemistry, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi ArabiaDepartment of Chemistry, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi ArabiaDepartment of Energy and Materials Engineering, Dongguk University-Seoul, Seoul 04620, KoreaEnvironmental Welfare Research Center, Korea Institute of Science & Technology, Hwarangno 14 gil 5, Seongbuk–gu, Seoul 02792, KoreaEnvironmental Welfare Research Center, Korea Institute of Science & Technology, Hwarangno 14 gil 5, Seongbuk–gu, Seoul 02792, KoreaDepartment of Electrical Engineering, National University of Sciences and Technology, Islamabad 44000, PakistanHitherto, most research has primarily focused on improving the UV sensor efficiency via surface treatments and by stimulating the ZnO nanorod (ZNR) surface Schottky barriers. However, to the best of our knowledge, no study has yet probed the intrinsic crystal defect generation and its effects on UV sensor efficiency. In this study, we undertake this task by fabricating an intrinsic defect-prone hydrothermally grown ZNRs (S1), Ga-doped ZNRs (S2), and defect-free microwave-assisted grown ZNRs (S3). The defect states were recognized by studying X-ray diffraction and photoluminescence characteristics. The large number of crystal defects in S1 and S2 had two pronged disadvantages. (1) Most of the UV light was absorbed by the defect traps and the e−h pair generation was compromised. (2) Mobility was directly affected by the carrier−carrier scattering and phonon scattering processes. Hence, the overall UV sensor efficiency was compromised based on the defect-induced mobility-response model. Considering the facts, defect-free S3 exhibited the best UV sensor performance with the highest on/off ratio, the least impulse response time, the highest recombination time, and highest gain-induced responsivity to 368 nm UV light, which was desired of an efficient passive metal oxide-based UV sensor. Our results were compared with the recently published results.https://www.mdpi.com/2079-4991/10/1/142zno nanorodsdopinguv sensordefectsmobilityresponsivitynanomaterials
spellingShingle Abu ul Hassan Sarwar Rana
Shoyebmohamad F. Shaikh
Abdullah M. Al-Enizi
Daniel Adjei Agyeman
Faizan Ghani
In Wook Nah
Areej Shahid
Intrinsic Control in Defects Density for Improved ZnO Nanorod-Based UV Sensor Performance
Nanomaterials
zno nanorods
doping
uv sensor
defects
mobility
responsivity
nanomaterials
title Intrinsic Control in Defects Density for Improved ZnO Nanorod-Based UV Sensor Performance
title_full Intrinsic Control in Defects Density for Improved ZnO Nanorod-Based UV Sensor Performance
title_fullStr Intrinsic Control in Defects Density for Improved ZnO Nanorod-Based UV Sensor Performance
title_full_unstemmed Intrinsic Control in Defects Density for Improved ZnO Nanorod-Based UV Sensor Performance
title_short Intrinsic Control in Defects Density for Improved ZnO Nanorod-Based UV Sensor Performance
title_sort intrinsic control in defects density for improved zno nanorod based uv sensor performance
topic zno nanorods
doping
uv sensor
defects
mobility
responsivity
nanomaterials
url https://www.mdpi.com/2079-4991/10/1/142
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