Ga<sub>2</sub>O<sub>3</sub> and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO<sub>2</sub> Emission Mitigation
Currently, a significant portion (~50%) of global warming emissions, such as CO<sub>2</sub>, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve t...
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MDPI AG
2022-02-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/15/3/1164 |
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| author | Zeyu Chi Jacob J. Asher Michael R. Jennings Ekaterine Chikoidze Amador Pérez-Tomás |
| author_facet | Zeyu Chi Jacob J. Asher Michael R. Jennings Ekaterine Chikoidze Amador Pérez-Tomás |
| author_sort | Zeyu Chi |
| collection | DOAJ |
| description | Currently, a significant portion (~50%) of global warming emissions, such as CO<sub>2</sub>, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide—Ga<sub>2</sub>O<sub>3</sub> (4.5–4.9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asIn<sub>2</sub>O<sub>3</sub>, ZnO and SnO<sub>2</sub>, to name a few. Indeed, Ga<sub>2</sub>O<sub>3</sub> as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, Al<sub>x</sub>Ga<sub>1-x</sub>O<sub>3</sub> may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGa<sub>2</sub>O<sub>4</sub> (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society. |
| first_indexed | 2024-03-09T23:34:51Z |
| format | Article |
| id | doaj.art-2d04ad6078454d0f98afb16bca77b5cf |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T23:34:51Z |
| publishDate | 2022-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-2d04ad6078454d0f98afb16bca77b5cf2023-11-23T17:03:21ZengMDPI AGMaterials1996-19442022-02-01153116410.3390/ma15031164Ga<sub>2</sub>O<sub>3</sub> and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO<sub>2</sub> Emission MitigationZeyu Chi0Jacob J. Asher1Michael R. Jennings2Ekaterine Chikoidze3Amador Pérez-Tomás4Groupe d’Etude de la Matière Condensée (GEMaC), UVSQ-CNRS, Université Paris-Saclay, 45 Av. des Etats-Unis, CEDEX, 78035 Versailles, FranceBay Campus, College of Engineering, Swansea University, Fabian Way, Crymlyn Burrows, Swansea SA1 8EN, UKBay Campus, College of Engineering, Swansea University, Fabian Way, Crymlyn Burrows, Swansea SA1 8EN, UKGroupe d’Etude de la Matière Condensée (GEMaC), UVSQ-CNRS, Université Paris-Saclay, 45 Av. des Etats-Unis, CEDEX, 78035 Versailles, FranceCatalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, SpainCurrently, a significant portion (~50%) of global warming emissions, such as CO<sub>2</sub>, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide—Ga<sub>2</sub>O<sub>3</sub> (4.5–4.9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asIn<sub>2</sub>O<sub>3</sub>, ZnO and SnO<sub>2</sub>, to name a few. Indeed, Ga<sub>2</sub>O<sub>3</sub> as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, Al<sub>x</sub>Ga<sub>1-x</sub>O<sub>3</sub> may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGa<sub>2</sub>O<sub>4</sub> (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society.https://www.mdpi.com/1996-1944/15/3/1164energy electronicsultra-wide bandgappower electronicsdiodestransistorsgallium oxide |
| spellingShingle | Zeyu Chi Jacob J. Asher Michael R. Jennings Ekaterine Chikoidze Amador Pérez-Tomás Ga<sub>2</sub>O<sub>3</sub> and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO<sub>2</sub> Emission Mitigation Materials energy electronics ultra-wide bandgap power electronics diodes transistors gallium oxide |
| title | Ga<sub>2</sub>O<sub>3</sub> and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO<sub>2</sub> Emission Mitigation |
| title_full | Ga<sub>2</sub>O<sub>3</sub> and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO<sub>2</sub> Emission Mitigation |
| title_fullStr | Ga<sub>2</sub>O<sub>3</sub> and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO<sub>2</sub> Emission Mitigation |
| title_full_unstemmed | Ga<sub>2</sub>O<sub>3</sub> and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO<sub>2</sub> Emission Mitigation |
| title_short | Ga<sub>2</sub>O<sub>3</sub> and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO<sub>2</sub> Emission Mitigation |
| title_sort | ga sub 2 sub o sub 3 sub and related ultra wide bandgap power semiconductor oxides new energy electronics solutions for co sub 2 sub emission mitigation |
| topic | energy electronics ultra-wide bandgap power electronics diodes transistors gallium oxide |
| url | https://www.mdpi.com/1996-1944/15/3/1164 |
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