Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application
Abstract NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investigating the delay time dependency at various...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2017-06-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-017-04529-4 |
| _version_ | 1818851112254439424 |
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| author | Jaehyuk Park Tobias Hadamek Agham B. Posadas Euijun Cha Alexander A. Demkov Hyunsang Hwang |
| author_facet | Jaehyuk Park Tobias Hadamek Agham B. Posadas Euijun Cha Alexander A. Demkov Hyunsang Hwang |
| author_sort | Jaehyuk Park |
| collection | DOAJ |
| description | Abstract NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investigating the delay time dependency at various voltages and temperatures. Based on the investigation, we reveal that the origin of leakage current in NbOx is partly due to insufficient Schottky barrier height originating from interface defects between the electrodes and NbOx layer. The leakage current problem can be addressed by inserting thin NiOy barrier layers. The NiOy inserted NbOx device is drift-free and exhibits high Ion/Ioff ratio (>5400), fast switching speed (<2 ns), and high operating temperature (>453 K) characteristics which are highly suitable to selector application for x-point memory arrays. We show that NbOx device with NiOx interlayers in series with resistive random access memory (ReRAM) device demonstrates improved readout margin (>29 word lines) suitable for x-point memory array application. |
| first_indexed | 2024-12-19T06:59:51Z |
| format | Article |
| id | doaj.art-2d115af51862416889643806af10ea45 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-19T06:59:51Z |
| publishDate | 2017-06-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-2d115af51862416889643806af10ea452022-12-21T20:31:27ZengNature PortfolioScientific Reports2045-23222017-06-01711810.1038/s41598-017-04529-4Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector applicationJaehyuk Park0Tobias Hadamek1Agham B. Posadas2Euijun Cha3Alexander A. Demkov4Hyunsang Hwang5Department of Material Science and Engineering, Pohang University of Science and TechnologyDepartment of Physics, The University of Texas at AustinDepartment of Physics, The University of Texas at AustinDepartment of Material Science and Engineering, Pohang University of Science and TechnologyDepartment of Physics, The University of Texas at AustinDepartment of Material Science and Engineering, Pohang University of Science and TechnologyAbstract NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investigating the delay time dependency at various voltages and temperatures. Based on the investigation, we reveal that the origin of leakage current in NbOx is partly due to insufficient Schottky barrier height originating from interface defects between the electrodes and NbOx layer. The leakage current problem can be addressed by inserting thin NiOy barrier layers. The NiOy inserted NbOx device is drift-free and exhibits high Ion/Ioff ratio (>5400), fast switching speed (<2 ns), and high operating temperature (>453 K) characteristics which are highly suitable to selector application for x-point memory arrays. We show that NbOx device with NiOx interlayers in series with resistive random access memory (ReRAM) device demonstrates improved readout margin (>29 word lines) suitable for x-point memory array application.https://doi.org/10.1038/s41598-017-04529-4 |
| spellingShingle | Jaehyuk Park Tobias Hadamek Agham B. Posadas Euijun Cha Alexander A. Demkov Hyunsang Hwang Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application Scientific Reports |
| title | Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application |
| title_full | Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application |
| title_fullStr | Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application |
| title_full_unstemmed | Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application |
| title_short | Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application |
| title_sort | multi layered nioy nbox nioy fast drift free threshold switch with high ion ioff ratio for selector application |
| url | https://doi.org/10.1038/s41598-017-04529-4 |
| work_keys_str_mv | AT jaehyukpark multilayerednioynboxnioyfastdriftfreethresholdswitchwithhighionioffratioforselectorapplication AT tobiashadamek multilayerednioynboxnioyfastdriftfreethresholdswitchwithhighionioffratioforselectorapplication AT aghambposadas multilayerednioynboxnioyfastdriftfreethresholdswitchwithhighionioffratioforselectorapplication AT euijuncha multilayerednioynboxnioyfastdriftfreethresholdswitchwithhighionioffratioforselectorapplication AT alexanderademkov multilayerednioynboxnioyfastdriftfreethresholdswitchwithhighionioffratioforselectorapplication AT hyunsanghwang multilayerednioynboxnioyfastdriftfreethresholdswitchwithhighionioffratioforselectorapplication |