Time-resolved single dopant charge dynamics in silicon

Probing individual impurities will become increasingly important as devices shrink towards the nanoscale. Here Rashidi et al., introduce a method based on time-resolved scanning tunnelling spectroscopy of surface dangling bonds to investigate the dynamics of individual dopants in silicon.

Bibliographic Details
Main Authors: Mohammad Rashidi, Jacob A. J. Burgess, Marco Taucer, Roshan Achal, Jason L. Pitters, Sebastian Loth, Robert A. Wolkow
Format: Article
Language:English
Published: Nature Portfolio 2016-10-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms13258
_version_ 1818978013055811584
author Mohammad Rashidi
Jacob A. J. Burgess
Marco Taucer
Roshan Achal
Jason L. Pitters
Sebastian Loth
Robert A. Wolkow
author_facet Mohammad Rashidi
Jacob A. J. Burgess
Marco Taucer
Roshan Achal
Jason L. Pitters
Sebastian Loth
Robert A. Wolkow
author_sort Mohammad Rashidi
collection DOAJ
description Probing individual impurities will become increasingly important as devices shrink towards the nanoscale. Here Rashidi et al., introduce a method based on time-resolved scanning tunnelling spectroscopy of surface dangling bonds to investigate the dynamics of individual dopants in silicon.
first_indexed 2024-12-20T16:36:53Z
format Article
id doaj.art-2d1bb8e3bd82405f904f9b1186ba6e60
institution Directory Open Access Journal
issn 2041-1723
language English
last_indexed 2024-12-20T16:36:53Z
publishDate 2016-10-01
publisher Nature Portfolio
record_format Article
series Nature Communications
spelling doaj.art-2d1bb8e3bd82405f904f9b1186ba6e602022-12-21T19:33:08ZengNature PortfolioNature Communications2041-17232016-10-01711710.1038/ncomms13258Time-resolved single dopant charge dynamics in siliconMohammad Rashidi0Jacob A. J. Burgess1Marco Taucer2Roshan Achal3Jason L. Pitters4Sebastian Loth5Robert A. Wolkow6Department of Physics, University of AlbertaMax Planck Institute for the Structure and Dynamics of MatterDepartment of Physics, University of AlbertaDepartment of Physics, University of AlbertaNational Institute for Nanotechnology, National Research Council of CanadaMax Planck Institute for the Structure and Dynamics of MatterDepartment of Physics, University of AlbertaProbing individual impurities will become increasingly important as devices shrink towards the nanoscale. Here Rashidi et al., introduce a method based on time-resolved scanning tunnelling spectroscopy of surface dangling bonds to investigate the dynamics of individual dopants in silicon.https://doi.org/10.1038/ncomms13258
spellingShingle Mohammad Rashidi
Jacob A. J. Burgess
Marco Taucer
Roshan Achal
Jason L. Pitters
Sebastian Loth
Robert A. Wolkow
Time-resolved single dopant charge dynamics in silicon
Nature Communications
title Time-resolved single dopant charge dynamics in silicon
title_full Time-resolved single dopant charge dynamics in silicon
title_fullStr Time-resolved single dopant charge dynamics in silicon
title_full_unstemmed Time-resolved single dopant charge dynamics in silicon
title_short Time-resolved single dopant charge dynamics in silicon
title_sort time resolved single dopant charge dynamics in silicon
url https://doi.org/10.1038/ncomms13258
work_keys_str_mv AT mohammadrashidi timeresolvedsingledopantchargedynamicsinsilicon
AT jacobajburgess timeresolvedsingledopantchargedynamicsinsilicon
AT marcotaucer timeresolvedsingledopantchargedynamicsinsilicon
AT roshanachal timeresolvedsingledopantchargedynamicsinsilicon
AT jasonlpitters timeresolvedsingledopantchargedynamicsinsilicon
AT sebastianloth timeresolvedsingledopantchargedynamicsinsilicon
AT robertawolkow timeresolvedsingledopantchargedynamicsinsilicon