Microstructure characterization, phase transition, and device application of phase-change memory materials
ABSTRACTPhase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Althou...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2023-12-01
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| Series: | Science and Technology of Advanced Materials |
| Subjects: | |
| Online Access: | https://www.tandfonline.com/doi/10.1080/14686996.2023.2252725 |
| Summary: | ABSTRACTPhase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Although PCM-based devices have been extensively studied, several concerns regarding the electrical, thermal, and structural dynamics of phase-change devices remain. In this article, aiming at PCM devices, a comprehensive review of PCM materials is provided, including the primary PCM device mechanics that underpin read and write operations, physics-based modeling initiatives and experimental characterization of the many features examined in nanoscale PCM devices. Finally, this review will propose a prognosis on a few unsolved challenges and highlight research areas of further investigation. |
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| ISSN: | 1468-6996 1878-5514 |