Microstructure characterization, phase transition, and device application of phase-change memory materials
ABSTRACTPhase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Althou...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2023-12-01
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| Series: | Science and Technology of Advanced Materials |
| Subjects: | |
| Online Access: | https://www.tandfonline.com/doi/10.1080/14686996.2023.2252725 |
| _version_ | 1797392784725901312 |
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| author | Kai Jiang Shubing Li Fangfang Chen Liping Zhu Wenwu Li |
| author_facet | Kai Jiang Shubing Li Fangfang Chen Liping Zhu Wenwu Li |
| author_sort | Kai Jiang |
| collection | DOAJ |
| description | ABSTRACTPhase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Although PCM-based devices have been extensively studied, several concerns regarding the electrical, thermal, and structural dynamics of phase-change devices remain. In this article, aiming at PCM devices, a comprehensive review of PCM materials is provided, including the primary PCM device mechanics that underpin read and write operations, physics-based modeling initiatives and experimental characterization of the many features examined in nanoscale PCM devices. Finally, this review will propose a prognosis on a few unsolved challenges and highlight research areas of further investigation. |
| first_indexed | 2024-03-08T23:53:29Z |
| format | Article |
| id | doaj.art-2d1f520873df4e43a1d13a9b288ba5e3 |
| institution | Directory Open Access Journal |
| issn | 1468-6996 1878-5514 |
| language | English |
| last_indexed | 2024-03-08T23:53:29Z |
| publishDate | 2023-12-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Science and Technology of Advanced Materials |
| spelling | doaj.art-2d1f520873df4e43a1d13a9b288ba5e32023-12-13T09:35:33ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142023-12-0124110.1080/14686996.2023.2252725Microstructure characterization, phase transition, and device application of phase-change memory materialsKai Jiang0Shubing Li1Fangfang Chen2Liping Zhu3Wenwu Li4School of Arts and Sciences, Shanghai Dianji University, Shanghai, ChinaDepartment of Physics, East China Normal University, Shanghai, ChinaSchool of Arts and Sciences, Shanghai Dianji University, Shanghai, ChinaState Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Department of Physics, Fudan University, Shanghai, ChinaDepartment of Physics, East China Normal University, Shanghai, ChinaABSTRACTPhase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Although PCM-based devices have been extensively studied, several concerns regarding the electrical, thermal, and structural dynamics of phase-change devices remain. In this article, aiming at PCM devices, a comprehensive review of PCM materials is provided, including the primary PCM device mechanics that underpin read and write operations, physics-based modeling initiatives and experimental characterization of the many features examined in nanoscale PCM devices. Finally, this review will propose a prognosis on a few unsolved challenges and highlight research areas of further investigation.https://www.tandfonline.com/doi/10.1080/14686996.2023.2252725Phase-change memorystructural regulationin-situ characterizationflexible devices |
| spellingShingle | Kai Jiang Shubing Li Fangfang Chen Liping Zhu Wenwu Li Microstructure characterization, phase transition, and device application of phase-change memory materials Science and Technology of Advanced Materials Phase-change memory structural regulation in-situ characterization flexible devices |
| title | Microstructure characterization, phase transition, and device application of phase-change memory materials |
| title_full | Microstructure characterization, phase transition, and device application of phase-change memory materials |
| title_fullStr | Microstructure characterization, phase transition, and device application of phase-change memory materials |
| title_full_unstemmed | Microstructure characterization, phase transition, and device application of phase-change memory materials |
| title_short | Microstructure characterization, phase transition, and device application of phase-change memory materials |
| title_sort | microstructure characterization phase transition and device application of phase change memory materials |
| topic | Phase-change memory structural regulation in-situ characterization flexible devices |
| url | https://www.tandfonline.com/doi/10.1080/14686996.2023.2252725 |
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