Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1‐xO2 Thin Film
Abstract The development of artificial tactile receptor systems is important in the fields of prosthetic devices, interfaces for the metaverse, and sensors. A pressure sensor and memory device may be used in this system to replicate the tactile detecting capabilities of human skin. The implementatio...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-02-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300594 |
| _version_ | 1827340929273430016 |
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| author | Minhyun Jung Seungyeob Kim Junghyeon Hwang Hye Jin Kim Yunjeong Kim Jinho Ahn Sanghun Jeon |
| author_facet | Minhyun Jung Seungyeob Kim Junghyeon Hwang Hye Jin Kim Yunjeong Kim Jinho Ahn Sanghun Jeon |
| author_sort | Minhyun Jung |
| collection | DOAJ |
| description | Abstract The development of artificial tactile receptor systems is important in the fields of prosthetic devices, interfaces for the metaverse, and sensors. A pressure sensor and memory device may be used in this system to replicate the tactile detecting capabilities of human skin. The implementation of systems that take into account mass production and miniaturization is still difficult. Here, a flexible artificial tactile receptor built using conventional semiconductor processes that combine a vertically stacked piezoelectric sensor with neuromorphic memory is presented. As a fundamental component for both sensors and memory, hafnium zirconium oxide (HZO) formed by using semiconductor deposition technique is introduced. Due to its exceptional piezoelectric performance, the morphotropic phase boundary of HZO is studied. The entire materials and processes are highly compatible with conventional semiconductor processes, including microwave annealing‐based low‐temperature crystallization. Even after 10,000 times of bending stress, the sensor and memory constructed on a flexible substrate exhibit consistent pressure detection characteristics over a wide range of 2–25 kPa. The feasibility of the approach is further demonstrated by a deep neural network simulation, which reached 90.8% braille recognition accuracy. Wearable electronics and medical devices are two examples of industrial domains that can use these flexible, exceptionally durable devices. |
| first_indexed | 2024-03-07T21:28:34Z |
| format | Article |
| id | doaj.art-2d22a22119e3433c8d5dbe204bd35123 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-07T21:28:34Z |
| publishDate | 2024-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-2d22a22119e3433c8d5dbe204bd351232024-02-27T04:06:06ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-02-01102n/an/a10.1002/aelm.202300594Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1‐xO2 Thin FilmMinhyun Jung0Seungyeob Kim1Junghyeon Hwang2Hye Jin Kim3Yunjeong Kim4Jinho Ahn5Sanghun Jeon6School of Electrical Engineering Korea Advanced Institute of Science & Technology Daejeon 34141 Republic of KoreaSchool of Electrical Engineering Korea Advanced Institute of Science & Technology Daejeon 34141 Republic of KoreaSchool of Electrical Engineering Korea Advanced Institute of Science & Technology Daejeon 34141 Republic of KoreaIntelligent Components and Sensors Research Section Electronics and Telecommunications Research Institute Daejeon 34129 Republic of KoreaIntelligent Components and Sensors Research Section Electronics and Telecommunications Research Institute Daejeon 34129 Republic of KoreaDivision of Materials Science and Engineering Hanyang University Seoul 04763 Republic of KoreaSchool of Electrical Engineering Korea Advanced Institute of Science & Technology Daejeon 34141 Republic of KoreaAbstract The development of artificial tactile receptor systems is important in the fields of prosthetic devices, interfaces for the metaverse, and sensors. A pressure sensor and memory device may be used in this system to replicate the tactile detecting capabilities of human skin. The implementation of systems that take into account mass production and miniaturization is still difficult. Here, a flexible artificial tactile receptor built using conventional semiconductor processes that combine a vertically stacked piezoelectric sensor with neuromorphic memory is presented. As a fundamental component for both sensors and memory, hafnium zirconium oxide (HZO) formed by using semiconductor deposition technique is introduced. Due to its exceptional piezoelectric performance, the morphotropic phase boundary of HZO is studied. The entire materials and processes are highly compatible with conventional semiconductor processes, including microwave annealing‐based low‐temperature crystallization. Even after 10,000 times of bending stress, the sensor and memory constructed on a flexible substrate exhibit consistent pressure detection characteristics over a wide range of 2–25 kPa. The feasibility of the approach is further demonstrated by a deep neural network simulation, which reached 90.8% braille recognition accuracy. Wearable electronics and medical devices are two examples of industrial domains that can use these flexible, exceptionally durable devices.https://doi.org/10.1002/aelm.202300594artificial mechanoreceptorE‐skinflexible electronicsHfZrOmicrowave annealing |
| spellingShingle | Minhyun Jung Seungyeob Kim Junghyeon Hwang Hye Jin Kim Yunjeong Kim Jinho Ahn Sanghun Jeon Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1‐xO2 Thin Film Advanced Electronic Materials artificial mechanoreceptor E‐skin flexible electronics HfZrO microwave annealing |
| title | Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1‐xO2 Thin Film |
| title_full | Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1‐xO2 Thin Film |
| title_fullStr | Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1‐xO2 Thin Film |
| title_full_unstemmed | Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1‐xO2 Thin Film |
| title_short | Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1‐xO2 Thin Film |
| title_sort | flexible artificial mechanoreceptor based on microwave annealed morphotropic phase boundary of hfxzr1 xo2 thin film |
| topic | artificial mechanoreceptor E‐skin flexible electronics HfZrO microwave annealing |
| url | https://doi.org/10.1002/aelm.202300594 |
| work_keys_str_mv | AT minhyunjung flexibleartificialmechanoreceptorbasedonmicrowaveannealedmorphotropicphaseboundaryofhfxzr1xo2thinfilm AT seungyeobkim flexibleartificialmechanoreceptorbasedonmicrowaveannealedmorphotropicphaseboundaryofhfxzr1xo2thinfilm AT junghyeonhwang flexibleartificialmechanoreceptorbasedonmicrowaveannealedmorphotropicphaseboundaryofhfxzr1xo2thinfilm AT hyejinkim flexibleartificialmechanoreceptorbasedonmicrowaveannealedmorphotropicphaseboundaryofhfxzr1xo2thinfilm AT yunjeongkim flexibleartificialmechanoreceptorbasedonmicrowaveannealedmorphotropicphaseboundaryofhfxzr1xo2thinfilm AT jinhoahn flexibleartificialmechanoreceptorbasedonmicrowaveannealedmorphotropicphaseboundaryofhfxzr1xo2thinfilm AT sanghunjeon flexibleartificialmechanoreceptorbasedonmicrowaveannealedmorphotropicphaseboundaryofhfxzr1xo2thinfilm |