Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETs
Abstract In this study, the domain switching mechanism of ferroelectric HZO thin films is investigated by analyzing the bulk charge of a graphene field‐effect transistor with an HZO dielectric device by using a pulsed IV measurement method. The domain switching speed, which is generally difficult to...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-01-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202300511 |
| _version_ | 1827385630824333312 |
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| author | Hyeon Jun Hwang Seung Mo Kim Byoung Hun Lee |
| author_facet | Hyeon Jun Hwang Seung Mo Kim Byoung Hun Lee |
| author_sort | Hyeon Jun Hwang |
| collection | DOAJ |
| description | Abstract In this study, the domain switching mechanism of ferroelectric HZO thin films is investigated by analyzing the bulk charge of a graphene field‐effect transistor with an HZO dielectric device by using a pulsed IV measurement method. The domain switching speed, which is generally difficult to observe from a typical DC‐IV analysis of metal‐oxide‐semiconductor field‐effect transistors using a parameter analyzer, is investigated via the fast pulsed IV analysis method. Based on the measurements, most of the ferroelectric HZO domains are fast switched within 100 ns; however, domains that require a longer switching time in the order of 1 ms are also identified. Short pulses can be continuously applied to minimize the influence of other domains that are not switched by the switched domain. The feasibility of partial switching of the domains, which can be utilized for the multi‐functional operation of ferroelectric HZO devices, is observed. The results suggest that further investigation of the physical properties of slow‐switching domains is necessary to develop future synaptic array applications. |
| first_indexed | 2024-03-08T15:29:13Z |
| format | Article |
| id | doaj.art-2d2a08ac013f43dba2ec9ea1d23a3991 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-08T15:29:13Z |
| publishDate | 2024-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-2d2a08ac013f43dba2ec9ea1d23a39912024-01-10T06:50:59ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-01-01101n/an/a10.1002/aelm.202300511Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETsHyeon Jun Hwang0Seung Mo Kim1Byoung Hun Lee2Center for Semiconductor Technology Convergence Department of Electrical Engineering Pohang University of Science and Technology Cheongam‐ro 77, Nam‐gu Pohang Gyeongbuk 37673 Republic of KoreaCenter for Semiconductor Technology Convergence Department of Electrical Engineering Pohang University of Science and Technology Cheongam‐ro 77, Nam‐gu Pohang Gyeongbuk 37673 Republic of KoreaCenter for Semiconductor Technology Convergence Department of Electrical Engineering Pohang University of Science and Technology Cheongam‐ro 77, Nam‐gu Pohang Gyeongbuk 37673 Republic of KoreaAbstract In this study, the domain switching mechanism of ferroelectric HZO thin films is investigated by analyzing the bulk charge of a graphene field‐effect transistor with an HZO dielectric device by using a pulsed IV measurement method. The domain switching speed, which is generally difficult to observe from a typical DC‐IV analysis of metal‐oxide‐semiconductor field‐effect transistors using a parameter analyzer, is investigated via the fast pulsed IV analysis method. Based on the measurements, most of the ferroelectric HZO domains are fast switched within 100 ns; however, domains that require a longer switching time in the order of 1 ms are also identified. Short pulses can be continuously applied to minimize the influence of other domains that are not switched by the switched domain. The feasibility of partial switching of the domains, which can be utilized for the multi‐functional operation of ferroelectric HZO devices, is observed. The results suggest that further investigation of the physical properties of slow‐switching domains is necessary to develop future synaptic array applications.https://doi.org/10.1002/aelm.202300511domain switchferroelectric Hf0.5Zr0.5O2, graphene FETmulti‐switchpulsed I–V |
| spellingShingle | Hyeon Jun Hwang Seung Mo Kim Byoung Hun Lee Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETs Advanced Electronic Materials domain switch ferroelectric Hf0.5Zr0.5O2, graphene FET multi‐switch pulsed I–V |
| title | Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETs |
| title_full | Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETs |
| title_fullStr | Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETs |
| title_full_unstemmed | Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETs |
| title_short | Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETs |
| title_sort | pulsed i v analysis of slow domain switching in ferroelectric hf0 5zr0 5o2 using graphene fets |
| topic | domain switch ferroelectric Hf0.5Zr0.5O2, graphene FET multi‐switch pulsed I–V |
| url | https://doi.org/10.1002/aelm.202300511 |
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