Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy
In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunne...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2012-01-01
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| Series: | Science and Technology of Advanced Materials |
| Online Access: | http://iopscience.iop.org/1468-6996/13/1/013002 |
| _version_ | 1818491551609782272 |
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| author | Takeo Ohno and Yutaka Oyama |
| author_facet | Takeo Ohno and Yutaka Oyama |
| author_sort | Takeo Ohno and Yutaka Oyama |
| collection | DOAJ |
| description | In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor. |
| first_indexed | 2024-12-10T17:32:32Z |
| format | Article |
| id | doaj.art-2d3c2933f0404f6f871c92a8e3e04ed7 |
| institution | Directory Open Access Journal |
| issn | 1468-6996 1878-5514 |
| language | English |
| last_indexed | 2024-12-10T17:32:32Z |
| publishDate | 2012-01-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Science and Technology of Advanced Materials |
| spelling | doaj.art-2d3c2933f0404f6f871c92a8e3e04ed72022-12-22T01:39:39ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142012-01-01131013002Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxyTakeo Ohno and Yutaka OyamaIn this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.http://iopscience.iop.org/1468-6996/13/1/013002 |
| spellingShingle | Takeo Ohno and Yutaka Oyama Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy Science and Technology of Advanced Materials |
| title | Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy |
| title_full | Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy |
| title_fullStr | Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy |
| title_full_unstemmed | Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy |
| title_short | Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy |
| title_sort | sidewall gaas tunnel junctions fabricated using molecular layer epitaxy |
| url | http://iopscience.iop.org/1468-6996/13/1/013002 |
| work_keys_str_mv | AT takeoohnoandyutakaoyama sidewallgaastunneljunctionsfabricatedusingmolecularlayerepitaxy |