Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
This paper presents the plasma-enhanced atomic layer deposition (PEALD) of titanium nitride (TiN) using the organic precursor tetrakis(ethylmethylamido)titanium (TEMAT), with remote ammonia (NH3) plasma as reactant gas. This work investigates the impact of substrate temperature, from 150-350°C, and...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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EDP Sciences
2016-01-01
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| Series: | MATEC Web of Conferences |
| Online Access: | http://dx.doi.org/10.1051/matecconf/20163901010 |
| _version_ | 1818447127948296192 |
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| author | Chen Z.X. Li X. Li W.-M. Lo G.-Q. |
| author_facet | Chen Z.X. Li X. Li W.-M. Lo G.-Q. |
| author_sort | Chen Z.X. |
| collection | DOAJ |
| description | This paper presents the plasma-enhanced atomic layer deposition (PEALD) of titanium nitride (TiN) using the organic precursor tetrakis(ethylmethylamido)titanium (TEMAT), with remote ammonia (NH3) plasma as reactant gas. This work investigates the impact of substrate temperature, from 150-350°C, and plasma times, from 5-30s, on deposition rate, resistivity, carbon content, N/Ti ratio and film density. The lowest resistivity of ~ 250 μΩ.cm was achieved at substrate temperatures 300-350°C and plasma time of 20s. At low substrate temperatures, although deposition was possible, carbon concentration was found to be higher, which thus affects film resistivity and density. |
| first_indexed | 2024-12-14T19:58:41Z |
| format | Article |
| id | doaj.art-2d638c7d32e54d62b4df07dd7f68a320 |
| institution | Directory Open Access Journal |
| issn | 2261-236X |
| language | English |
| last_indexed | 2024-12-14T19:58:41Z |
| publishDate | 2016-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | MATEC Web of Conferences |
| spelling | doaj.art-2d638c7d32e54d62b4df07dd7f68a3202022-12-21T22:49:13ZengEDP SciencesMATEC Web of Conferences2261-236X2016-01-01390101010.1051/matecconf/20163901010matecconf_iccme2016_01010Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)Chen Z.X.0Li X.1Li W.-M.Lo G.-Q.2Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research)Picosun Asia Pte. Ltd.Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research)This paper presents the plasma-enhanced atomic layer deposition (PEALD) of titanium nitride (TiN) using the organic precursor tetrakis(ethylmethylamido)titanium (TEMAT), with remote ammonia (NH3) plasma as reactant gas. This work investigates the impact of substrate temperature, from 150-350°C, and plasma times, from 5-30s, on deposition rate, resistivity, carbon content, N/Ti ratio and film density. The lowest resistivity of ~ 250 μΩ.cm was achieved at substrate temperatures 300-350°C and plasma time of 20s. At low substrate temperatures, although deposition was possible, carbon concentration was found to be higher, which thus affects film resistivity and density.http://dx.doi.org/10.1051/matecconf/20163901010 |
| spellingShingle | Chen Z.X. Li X. Li W.-M. Lo G.-Q. Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) MATEC Web of Conferences |
| title | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| title_full | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| title_fullStr | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| title_full_unstemmed | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| title_short | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| title_sort | plasma enhanced atomic layer deposition peald of tin using the organic precursor tetrakis ethylmethylamido titanium temat |
| url | http://dx.doi.org/10.1051/matecconf/20163901010 |
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