Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature

Nb-doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 ceramics were prepared by conventional solid-state method. The dielectric properties and the structural properties were investigated. When Nb2O5 is doped into 0.8BT-0.2BMT system, a small amount of Ba4Ti12O27 secondary phase is formed. The lattice parameters gr...

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Main Authors: Feng Si, Bin Tang, Zixuan Fang, Shuren Zhang
Format: Article
Language:English
Published: MDPI AG 2017-06-01
Series:Crystals
Subjects:
Online Access:http://www.mdpi.com/2073-4352/7/6/168
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author Feng Si
Bin Tang
Zixuan Fang
Shuren Zhang
author_facet Feng Si
Bin Tang
Zixuan Fang
Shuren Zhang
author_sort Feng Si
collection DOAJ
description Nb-doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 ceramics were prepared by conventional solid-state method. The dielectric properties and the structural properties were investigated. When Nb2O5 is doped into 0.8BT-0.2BMT system, a small amount of Ba4Ti12O27 secondary phase is formed. The lattice parameters gradually increase with the Nb2O5 doping. It is found that the temperature-capacitance characteristics greatly depend on Nb2O5 content. With the addition of 3.0 mol% Nb2O5, a 0.8BT-0.2BMT ceramic sample could satisfy the EIA X9R specification. This material is promising for high-temperature MLCC application.
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spelling doaj.art-2d8c7c2e671a4c779cf091757078e26a2022-12-22T02:21:43ZengMDPI AGCrystals2073-43522017-06-017616810.3390/cryst7060168cryst7060168Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High TemperatureFeng Si0Bin Tang1Zixuan Fang2Shuren Zhang3State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaNb-doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 ceramics were prepared by conventional solid-state method. The dielectric properties and the structural properties were investigated. When Nb2O5 is doped into 0.8BT-0.2BMT system, a small amount of Ba4Ti12O27 secondary phase is formed. The lattice parameters gradually increase with the Nb2O5 doping. It is found that the temperature-capacitance characteristics greatly depend on Nb2O5 content. With the addition of 3.0 mol% Nb2O5, a 0.8BT-0.2BMT ceramic sample could satisfy the EIA X9R specification. This material is promising for high-temperature MLCC application.http://www.mdpi.com/2073-4352/7/6/168barium titanateX9Rdielectric ceramicsMLCC
spellingShingle Feng Si
Bin Tang
Zixuan Fang
Shuren Zhang
Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature
Crystals
barium titanate
X9R
dielectric ceramics
MLCC
title Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature
title_full Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature
title_fullStr Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature
title_full_unstemmed Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature
title_short Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature
title_sort nb doped 0 8batio3 0 2bi mg0 5ti0 5 o3 ceramics with stable dielectric properties at high temperature
topic barium titanate
X9R
dielectric ceramics
MLCC
url http://www.mdpi.com/2073-4352/7/6/168
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AT zixuanfang nbdoped08batio302bimg05ti05o3ceramicswithstabledielectricpropertiesathightemperature
AT shurenzhang nbdoped08batio302bimg05ti05o3ceramicswithstabledielectricpropertiesathightemperature