Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature
Nb-doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 ceramics were prepared by conventional solid-state method. The dielectric properties and the structural properties were investigated. When Nb2O5 is doped into 0.8BT-0.2BMT system, a small amount of Ba4Ti12O27 secondary phase is formed. The lattice parameters gr...
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MDPI AG
2017-06-01
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Online Access: | http://www.mdpi.com/2073-4352/7/6/168 |
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author | Feng Si Bin Tang Zixuan Fang Shuren Zhang |
author_facet | Feng Si Bin Tang Zixuan Fang Shuren Zhang |
author_sort | Feng Si |
collection | DOAJ |
description | Nb-doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 ceramics were prepared by conventional solid-state method. The dielectric properties and the structural properties were investigated. When Nb2O5 is doped into 0.8BT-0.2BMT system, a small amount of Ba4Ti12O27 secondary phase is formed. The lattice parameters gradually increase with the Nb2O5 doping. It is found that the temperature-capacitance characteristics greatly depend on Nb2O5 content. With the addition of 3.0 mol% Nb2O5, a 0.8BT-0.2BMT ceramic sample could satisfy the EIA X9R specification. This material is promising for high-temperature MLCC application. |
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spelling | doaj.art-2d8c7c2e671a4c779cf091757078e26a2022-12-22T02:21:43ZengMDPI AGCrystals2073-43522017-06-017616810.3390/cryst7060168cryst7060168Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High TemperatureFeng Si0Bin Tang1Zixuan Fang2Shuren Zhang3State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaNb-doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 ceramics were prepared by conventional solid-state method. The dielectric properties and the structural properties were investigated. When Nb2O5 is doped into 0.8BT-0.2BMT system, a small amount of Ba4Ti12O27 secondary phase is formed. The lattice parameters gradually increase with the Nb2O5 doping. It is found that the temperature-capacitance characteristics greatly depend on Nb2O5 content. With the addition of 3.0 mol% Nb2O5, a 0.8BT-0.2BMT ceramic sample could satisfy the EIA X9R specification. This material is promising for high-temperature MLCC application.http://www.mdpi.com/2073-4352/7/6/168barium titanateX9Rdielectric ceramicsMLCC |
spellingShingle | Feng Si Bin Tang Zixuan Fang Shuren Zhang Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature Crystals barium titanate X9R dielectric ceramics MLCC |
title | Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature |
title_full | Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature |
title_fullStr | Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature |
title_full_unstemmed | Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature |
title_short | Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature |
title_sort | nb doped 0 8batio3 0 2bi mg0 5ti0 5 o3 ceramics with stable dielectric properties at high temperature |
topic | barium titanate X9R dielectric ceramics MLCC |
url | http://www.mdpi.com/2073-4352/7/6/168 |
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