Investigation of Compact Hollow-Anode Discharge Source for Copper Thin Films by Sputtering Processes
A compact hollow-anode discharge (HAD) source with a size of 60 mm in radius and 70 mm in length has been developed to stably generate plasma jets for various sputtering processes in semiconductor and display fabrications. A developed HAD plasma source has been investigated by cylindrical electric p...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-05-01
|
| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/14/11/3138 |
| _version_ | 1797532309774139392 |
|---|---|
| author | In-Je Kang Ji-Hun Kim In-Sun Park Kyu-Sun Chung |
| author_facet | In-Je Kang Ji-Hun Kim In-Sun Park Kyu-Sun Chung |
| author_sort | In-Je Kang |
| collection | DOAJ |
| description | A compact hollow-anode discharge (HAD) source with a size of 60 mm in radius and 70 mm in length has been developed to stably generate plasma jets for various sputtering processes in semiconductor and display fabrications. A developed HAD plasma source has been investigated by cylindrical electric probes, and the experimental results were compared to the values of numerical calculations. A uniform density discharge model with a geometry factor was proposed to estimate the profiles of plasma parameters. Owing to the difference of absolute magnitude, even with the similar trend of spatial variation, plasma parameters such as electron temperature (<i>T<sub>e</sub></i>) and plasma density (<i>n<sub>e</sub></i>) measured at z = 3 cm have been calibrated by the values of numerical calculations at the nozzle entrance (z = 0 cm, at the throat of the jet), and the calibration factors for <i>T<sub>e</sub></i> and <i>n</i><sub>0</sub> have been deduced by comparing the experimental values to numerical calculations. These are to be explained by the decay mechanism along the axis of the jet with elastic collisions in terms of the mean free path. The developed HAD plasma source was tested for the deposition of Cu thin films with an optimized condition as a plausible application to sputtering processes. |
| first_indexed | 2024-03-10T10:57:18Z |
| format | Article |
| id | doaj.art-2db9a01d055e45babe00f053491926ca |
| institution | Directory Open Access Journal |
| issn | 1996-1073 |
| language | English |
| last_indexed | 2024-03-10T10:57:18Z |
| publishDate | 2021-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj.art-2db9a01d055e45babe00f053491926ca2023-11-21T21:43:33ZengMDPI AGEnergies1996-10732021-05-011411313810.3390/en14113138Investigation of Compact Hollow-Anode Discharge Source for Copper Thin Films by Sputtering ProcessesIn-Je Kang0Ji-Hun Kim1In-Sun Park2Kyu-Sun Chung3Institute of Plasma Technology, Korea Institute of Fusion Energy, Gunsan 54004, KoreaInstitute of Plasma Technology, Korea Institute of Fusion Energy, Gunsan 54004, KoreaDepartment of Electrical Engineering, Hanyang University, Seoul 133791, KoreaDepartment of Electrical Engineering, Hanyang University, Seoul 133791, KoreaA compact hollow-anode discharge (HAD) source with a size of 60 mm in radius and 70 mm in length has been developed to stably generate plasma jets for various sputtering processes in semiconductor and display fabrications. A developed HAD plasma source has been investigated by cylindrical electric probes, and the experimental results were compared to the values of numerical calculations. A uniform density discharge model with a geometry factor was proposed to estimate the profiles of plasma parameters. Owing to the difference of absolute magnitude, even with the similar trend of spatial variation, plasma parameters such as electron temperature (<i>T<sub>e</sub></i>) and plasma density (<i>n<sub>e</sub></i>) measured at z = 3 cm have been calibrated by the values of numerical calculations at the nozzle entrance (z = 0 cm, at the throat of the jet), and the calibration factors for <i>T<sub>e</sub></i> and <i>n</i><sub>0</sub> have been deduced by comparing the experimental values to numerical calculations. These are to be explained by the decay mechanism along the axis of the jet with elastic collisions in terms of the mean free path. The developed HAD plasma source was tested for the deposition of Cu thin films with an optimized condition as a plausible application to sputtering processes.https://www.mdpi.com/1996-1073/14/11/3138hollow anode discharge sourceuniform density discharge modelcopper thin films |
| spellingShingle | In-Je Kang Ji-Hun Kim In-Sun Park Kyu-Sun Chung Investigation of Compact Hollow-Anode Discharge Source for Copper Thin Films by Sputtering Processes Energies hollow anode discharge source uniform density discharge model copper thin films |
| title | Investigation of Compact Hollow-Anode Discharge Source for Copper Thin Films by Sputtering Processes |
| title_full | Investigation of Compact Hollow-Anode Discharge Source for Copper Thin Films by Sputtering Processes |
| title_fullStr | Investigation of Compact Hollow-Anode Discharge Source for Copper Thin Films by Sputtering Processes |
| title_full_unstemmed | Investigation of Compact Hollow-Anode Discharge Source for Copper Thin Films by Sputtering Processes |
| title_short | Investigation of Compact Hollow-Anode Discharge Source for Copper Thin Films by Sputtering Processes |
| title_sort | investigation of compact hollow anode discharge source for copper thin films by sputtering processes |
| topic | hollow anode discharge source uniform density discharge model copper thin films |
| url | https://www.mdpi.com/1996-1073/14/11/3138 |
| work_keys_str_mv | AT injekang investigationofcompacthollowanodedischargesourceforcopperthinfilmsbysputteringprocesses AT jihunkim investigationofcompacthollowanodedischargesourceforcopperthinfilmsbysputteringprocesses AT insunpark investigationofcompacthollowanodedischargesourceforcopperthinfilmsbysputteringprocesses AT kyusunchung investigationofcompacthollowanodedischargesourceforcopperthinfilmsbysputteringprocesses |