Electrical and Recombination Properties of Polar Orthorhombic κ-Ga<sub>2</sub>O<sub>3</sub> Films Prepared by Halide Vapor Phase Epitaxy

Electrical and Recombination Properties of Polar Orthorhombic κ-Ga<sub>2</sub>O<sub>3</sub> Films Prepared by Halide Vapor Phase Epitaxy

In this study, the structural and electrical properties of orthorhombic κ-Ga<sub>2</sub>O<sub>3</sub> films prepared using Halide Vapor Phase Epitaxy (HVPE) on AlN/Si and GaN/sapphire templates were studied. For κ-Ga<sub>2</sub>O<sub>3</sub>/AlN/Si str...

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Détails bibliographiques
Auteurs principaux: Eugene B. Yakimov, Alexander Y. Polyakov, Vladimir I. Nikolaev, Alexei I. Pechnikov, Mikhail P. Scheglov, Eugene E. Yakimov, Stephen J. Pearton
Format: Article
Langue:English
Publié: MDPI AG 2023-03-01
Collection:Nanomaterials
Sujets:
κ-Ga<sub>2</sub>O<sub>3</sub>
rotational nanodomains
electrical properties
deep traps
DLTS
EBIC
Accès en ligne:https://www.mdpi.com/2079-4991/13/7/1214

Internet

https://www.mdpi.com/2079-4991/13/7/1214

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