Electrical and Recombination Properties of Polar Orthorhombic κ-Ga<sub>2</sub>O<sub>3</sub> Films Prepared by Halide Vapor Phase Epitaxy

Electrical and Recombination Properties of Polar Orthorhombic κ-Ga<sub>2</sub>O<sub>3</sub> Films Prepared by Halide Vapor Phase Epitaxy

In this study, the structural and electrical properties of orthorhombic κ-Ga<sub>2</sub>O<sub>3</sub> films prepared using Halide Vapor Phase Epitaxy (HVPE) on AlN/Si and GaN/sapphire templates were studied. For κ-Ga<sub>2</sub>O<sub>3</sub>/AlN/Si str...

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Bibliographic Details
Main Authors:	Eugene B. Yakimov, Alexander Y. Polyakov, Vladimir I. Nikolaev, Alexei I. Pechnikov, Mikhail P. Scheglov, Eugene E. Yakimov, Stephen J. Pearton
Format:	Article
Language:	English
Published:	MDPI AG 2023-03-01
Series:	Nanomaterials
Subjects:	κ-Ga<sub>2</sub>O<sub>3</sub> rotational nanodomains electrical properties deep traps DLTS EBIC
Online Access:	https://www.mdpi.com/2079-4991/13/7/1214

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